MT110CB18T1 APTSEMI | Alldatasheet
Document overview
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Technical content
Features
y International standard package y High Surge Capability y Glass passivated chip y Simple Mounting y Heat transfer through aluminum oxide DBCceramic isolated metal baseplate y UL recognized applied for file no. E360040 TYPE VRRM/VDRM VRSM MT110CB08T1 MT110CB12T1 MT110CB16T1 MT110CB18T1 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Circuit
Applications
y DC Motor Control and Drives y Heat and temperature control Symbol Item Conditions Values Units Min. Typ. Max. VFM Forward Voltage Drop, max. T=25℃ IF =300A 1.65 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =125℃ VRD=VRRM ≤0.5 mA mA
Document Number: S - M 0 0 4 9 www.apt-semi.com Rev.1.0, May.31, 2013 2 ◆Thyristor Maximum Ratings Thermal Characteristics Symbol Item Conditions Values Units Rth(j-c) Thermal Impedance, max. Junction to Case 0.28 ℃/W Rth(c-s) Thermal Impedance, ma x. Case to Heatsink 0.20 ℃/W
Electrical Characteristics
Symbol Item Conditions Values Units ITAV Average On-State Current Sine 180o;Tc=85℃ 110 A ITSM Surge On-State Current TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 2250 1900 A i2t Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 25000
18000 A2s
Tvj Operating Junction Temperature -40 to +130 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M5) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s 2 Symbol Item Conditions Values UnitsMin. Typ. Max. VTM Peak On-State Voltage, max. T=25℃ I T =300A 1.65 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. T VJ=TVJM ,V R=VRRM ,V D= VDRM 20 mA VTO On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.9 V rT Value of on-state slope resistance. max TVJ =TVJM 2 m Ω VGT Gate Trigger Voltage, max. TVJ =25℃ , V D =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , V D =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V IGD Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 6 mA IL Latching current, max. TVJ =25℃ , R G = 33 Ω 300 600 mA IH Holding current, max. TVJ =25℃ , V D =6V 150 250 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us 1 us tq Circuit commutated turn-off time T VJ =TVJM 100 us
Document Number: S - M 0 0 4 9 www.apt-semi.com Rev.1.0, May.31, 2013 3 Performance Curves Fig1. Power dissipation Fig2.Forward Current Derating Curve
0 I TAV 50 100 A 150
W 150 100 PTAV rec.30 rec.60 rec.120 sin.180 DC Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1 10 S 100 0.50 ℃/ W 0.25 Zth(j-C) Zth(j-S) 10 100 ms 1000 50HZ 2500 A 1250 0 V T M 0 . 5 1 . 0 1 . 5 V 2 . 0 300 A 200 100 IT max. Typ. DC sin.180 rec.120 rec.60 rec.30 ITAVM 200 A 160 120
0 Tc 50 100 ℃ 130
25℃ - - -125℃
Document Number: S - M 0 0 4 9 www.apt-semi.com Rev.1.0, May.31, 2013 4 Package Outline Information CASE: T1 Dimensions in mm Fig6. Gate trigger Characteristics 1/2·MT110CB18T1 VGD125℃ IGD125℃ IGT VGT 20V;20Ω PG(tp) 0.001 I G 0 . 0 1 0 . 1 1 1 0 A 1 0 0 100 V V G 0.1 -40℃ 25℃ 125℃ Tvj