MT110C18T1 APTSEMI | Alldatasheet

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Technical content

Features

y International standard package y High Surge Capability y Glass passivated chip y Simple Mounting y Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate y UL recognized applied for file no. E360040 TYPE VRRM VRSM MT110C08T1 MT110C12T1 MT110C16T1 MT110C18T1 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Symbol Conditions Values Units ITAV Sine 180o;Tc=85℃ 110 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 2250 1900 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 25000

18000 A2s

Tvj -40 to 130 ℃ Tstg -40 to 125 ℃ Mt To terminals(M5) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt T J= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s 2 Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.28/0.14 ℃/W Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W Circuit

Applications

y DC Motor Control and Drives y Heat and temperature control

D o c u m e n t N u m b e r : S - M 0 0 3 7 www.apt-semi.com Rev.1.0, May.31, 2013 2

Electrical Characteristics

Symbol Conditions Values Units Min. Typ. Max. VTM T=25℃ I TM =300A 1.65 V IRRM/IDRM T VJ =TVJM ,VR=VRRM ,VD=VDRM 20 mA VTO For power-loss calculations only (TVJ =125℃) 0.9 V rT T VJ =TVJM 2 m Ω VGT TVJ =25℃ , V D =6V 3 V IGT TVJ =25℃ , V D =6V 150 mA VGD TVJ =125℃ , V D =2/3VDRM 0.25 V IGD TVJ =125℃ , V D =2/3VDRM 6 mA IL TVJ =25℃ , R G = 33 Ω 300 600 mA IH TVJ =25℃ , V D =6V 150 250 mA tgd TVJ =25℃, IG=1A, diG/dt=1A/us 1 us tq T VJ =TVJM 100 us

D o c u m e n t N u m b e r : S - M 0 0 3 7 www.apt-semi.com Rev.1.0, May.31, 2013 3 Performance Curves Fig1. Power dissipation Fig2.Forward Current Derating Curve

0 I TAV 50 100 A 150

W 150 100 PTAV rec.30 rec.60 rec.120 sin.180 DC Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1 10 S 100 0.50 ℃/ W 0.25 Zth(j-C) Zth(j-S) 10 100 ms 1000 50HZ 2500 A 1250 0 V T M 0 . 5 1 . 0 1 . 5 V 2 . 0 300 A 200 100 IT max. Typ. DC sin.180 rec.120 rec.60 rec.30 ITAVM 200 A 160 120

0 Tc 50 100 ℃ 130

25℃ - - -125℃

D o c u m e n t N u m b e r : S - M 0 0 3 7 www.apt-semi.com Rev.1.0, May.31, 2013 4 Package Outline Information CASE: T1 Dimensions in mm Fig6. Gate trigger Characteristics 1/2·MT110C18T1 VGD125℃ IGD125℃ IGT VGT 20V;20Ω PG(tp) 0.001 I G 0 . 0 1 0 . 1 1 1 0 A 1 0 0 100 V V G 0.1 -40℃ 25℃ 125℃ Tvj