MSU4N40 BWTECH | Alldatasheet

Document overview

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Technical content

Features

  • Originative New Design
  • 100% EAS Test
  • Rugged Gate Oxide Technology
  • Extremely Low Intrinsic Capacitances
  • Remarkable Switching Characteristics
  • Unequalled Gate Charge : 25 nC (Typ.)
  • Extended Safe Operating Area
  • Lower RDS(ON) : 0.78 Ω (Typ.) @VGS=10V
  • RoHS compliant package Packing & Order Information 80/Tube ; 4,000/Box Dimensions in Millimeters Dimensions in Inches Symbol min max min max A 2.15 2.45 0.85 0.96 A1 1.00 1.40 0.39 0.55 B 1.25 1.75 0.49 0.69 b 0.45 0.75 0.18 0.3 b1 0.65 0.95 0.26 0.37 C 0.38 0.64 0.15 0.25 C1 0.38 0.64 0.15 0.25 D 6.30 6.70 2.48 2.64 D1 5.10 5.50 2.01 2.17 E 5.30 5.70 2.09 2.24 e 2.3 (typ.) 0.91 (typ.) e1 4.4 4.8 1.73 1.89 L 7.4 8.0 2.91 3.15 Graphic symbol

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage ±30 V ID Drain Current -Continuous (TC=25°C) 4.5 A Drain Current -Continuous (TC=100°C) 3.0 A IDM Drain Current Pulsed 22 A EAS Single Pulsed Avalanche Energy 270 mJ EAR Repetitive Avalanche Energy 7.3 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns PD Power Dissipation (TC = 25 °C) - Derate above 25°C 25 W

0.38 W/°C

TJ,TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 °C

  • Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Max. Units RθJc Junction-to-Case 1.72 °C/W RθJA Junction-to-Ambient 83.3 On Characteristics Symbol Test Conditions Min Typ. Max. Units VGS VDS = VGS , ID = 250μA 2.0 -- 4.0 V *RDS(ON) VGS = 10 V , ID = 1 A -- 0.78 0.9 Ω Static Characteristics Symbol Test Conditions Min Typ. Max. Units BVDSS VGS = 0 V , ID=250μA 400 -- -- V △BVDSS /△TJ ID = 250μA, Referenced to 25°C -- 0.54 -- V/°C IDSS VDS = 400 V , VGS = 0 V VDS = 320 V , TC = 125°C -- -- 1 μA IGSSF VGS = 30 V , VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V , VDS = 0 V -- -- -100 nA

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units td(on) VDS = 200 V, ID = 4.5 A, RG = 25 Ω -- 15 35 ns tr -- 65 140 ns td(off) -- 23 55 ns tf -- 40 85 ns Qg VDS = 320 V,ID = 4.5 A, VGS = 10 V -- 16 20 nC Qgs -- 2.3 -- nC Qgd -- 8.5 -- nC CISS VDS = 25 V, VGS = 0 V, F = 1.0MHz -- 480 625 pF COSS -- 80 105 pF CRSS -- 15 20 pF Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units IS -- -- 4.5 A ISM -- -- 18 VSD IS = 4.5 A , VGS = 0 V -- -- 1.4 V trr IS = 4.5 A , VGS = 0 V diF/dt = 100A/μs -- 230 -- ns Qrr -- 1.7 -- μC Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3. ISD≦4.5A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN CURRENT AND GATE VOLTAGE FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Test Circuit & Waveform FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

Publication Order Number: [ MSU4N40] © Bruckewell Technology Corporation Rev. A -2014 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY , FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.