MSU115N06G

MSU115N06G CITC | Alldatasheet

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■ Features 60V/58A• R = 11.5mΩ (max.) @ V = 10VDS(ON) GS R = 14.5mΩ (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged.• Lead free and green device available• (RoHS compliant). 100% UIS + R Testedg• Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C ■ Application

• DC-DC converter.
• Power Load Switching Application. ■ Pin Description G D S G S D O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A PARAMETER Pulsed Drain Current(Note:1) Avalanche Energy, single pulse (Note:2) Diode Continuous Forward Current Maximum Power Dissipation Drain-Source Voltage Avalanche Current, single pulse (Note:2) Gate-Source Voltage CONDITIONS Symbol VDSS PD IAS MSU115N06G ±20 UNIT V mJ ID 2.5 A W IDM IS 100 230 20 A VGSS EAS W A PD V Continuous Drain Current O T = 100 CC 37 Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C 50Steady StateThermal Resistance-Junction to Ambient(Note:3) RθJA NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. O O 2.UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T =25 C).J 3.surface mounted on 1 inch per square pad area. O T = 25 CC O T = 25 CC O T = 25 CC O T = 100 CC O T = 25 CC O C/W Maximum Power Dissipation O T = 25 CA O T = 70 CA 1.6 Continuous Drain Current O T = 70 CA O T = 25 CA ID A L=0.5mH L=0.5mH Thermal Resistance-Junction to Case(Note:3) Steady State RθJC 1.5 O C/W MSU115N06G N-Channel Enhancement Mode MOSFET Top View of TO-251

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Gate Resistance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(Note:4) Reverse Recovery Time Total Gate Charge Reverse Recovery Charge Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(Note:5) ■ Diode Characteristics V = 0V, I = 250µAGS DS CONDITIONS Symbol BVDSS IDSS MIN. TYP. MAX. UNIT V nA µA IGSS 11.5 ±100 2 V V = 48V, V = 0VDS GS V = 48V, V = 0V, T = 85°CDS GS J V = ±20V, V = 0VGS DS RG Coss Crss Ω pF Ciss 105 215 2500 1V = 0V, V = 0V f = 1.0MHzGS DS V = 30V, V = 0V, f = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT V QRR VSD 0.8 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(Note:5) PARAMETER Qg CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = 250µADS GS DS VGS(th) 1 3 Drain-Source On-state Resistance(Note:4) V = 10V, I = 25AGS DS V = 4.5V, I = 25AGS DS RDS(on) 9.5 14.511 I = 25A, V = 0VSD GS 1.3 I = 25A, dI /dt = 100A/μsSD SD tRR nC 3500 Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = 30V, R = 30Ω, I = 1ADD L DS V =10V R = 6ΩGEN G ns 20 36 Gate-Source Charge Gate-Drain Charge V = 30V, V =10V, I =25ADS GS DS Qgs Qgd 8.5 nC NOTE : 4.Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%. 5.Guranteed by design, not subject to production testing. MSU115N06G N-Channel Enhancement Mode MOSFET mΩ ns td(on) tr td(off) tf V = 30V, V =4.5V, I = 25ADS GS DSTotal Gate Charge Total Gate Charge Qg 45 Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C

■ Rating and characteristic curves P -Power ( W tot I-Drain C urrent(A) D I-Drain C urrent(A) D Norm alized Transient Therm al R esistance Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature Thermal Transient Impedance r i Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) 0 20 40 60 80 100 120 140 160 TC=25o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC :1.5o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100 120 140 160 TC=25o C,VG=10V 0.1 1 10 100 300 100 500 10ms 100ms 1ms DC TC=25o C Rds(on) L imit MSU115N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C

■ Rating and characteristic curves I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage VDS - Drain - Source Voltage (V) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage 0 1 2 3 4 5 100 120 140 3.5V VGS=5,6,7,8,9,10V 0 20 40 60 80 100 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=25A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA Output Characteristics MSU115N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C

■ Rating and characteristic curves Norm alized O n R esistance I-Source C urrent(A) S C-Capacitance(pF) V ate-Source Vo ltage(V) G S Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25o C: 9.5mW VGS = 10V IDS = 25A 0.1 100 Tj=150o C Tj=25o C 0 8 16 24 32 40 400 800 1200 1600 2000 2400 2800 3200 3600 Frequency=1MHz Crss Coss Ciss 0 9 18 27 36 450 VDS=30V IDS=25A MSU115N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C

■ Test circuit and waveform DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% MSU115N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C

N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C ■ Package Information E D L e b2 b A C A1 TO-251S Y M B O L MILLIMETERS INCHES MIN. MAX. MAX.MIN. 2.184A b c D E e L 2.388 0.086 0.094 0.890 0.635 0.910 4.953 0.457 0.457 5.334 5.207 6.350 4.320 2.29BSC 7.000 1.905 0.890 1.143 1.143 0.890 1.143 5.460 0.610 0.890 6.223 6.730 9.650 2.2902.290 1.270 1.520 0.035 0.025 0.036 0.195 0.018 0.018 0.210 0.205 0.250 0.170 0.090BSC 0.280 0.075 0.035 0.045 0.045 0.035 0.045 0.215 0.024 0.035 0.245 0.265 0.380 0.090 0.050 0.060 RECOMMENDED LAND PATTERN

■ Classification Profile MSU115N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C

(Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 MSU115N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M71 Revised Date : 2015/08/03 Revision : C