MSTR1260 LUGUANG | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
- Adopt FRD chip
- Low forward Voltage drop
- Fast reverse recovery time
- High frequency operation
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for enhanced ruggedness and long term reliability Typical Applications Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Mechanical Data
- Package: TO-220AC ITO-220AC Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
- Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102
- Polarity: As marked ■Maximum Ratings (Ta=25℃ Unless otherwise specified） MTSR1260 MTSR1260F VRSM V 600 600 VRRM V 600 600 Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM IFRM TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 130 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine TVJ=150oC t=10ms(50Hz), sine t=8.3ms(60Hz), sine 120 140 AIFSM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine TVJ=150oC t=10ms(50Hz), sine t=8.3ms(60Hz), sine A2sI2t TVJ TVJM Tstg -55...+175 175 -55...+175 oC Ptot TC=25oC Md Mounting torque W Nm Weight gtypical http://www.lgesemi .com Revision:20230407-P1 mail:lge@lgesemi.com TYPE
■Electrical Characteristics ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT MTSR1260/MTSR1260F Thermal Resistance Between junction and case R θJ-C ℃/W 4.0 Between junction and Air R θJ-A ℃/W 50 ■Ordering Information (Example) PREFERED P/N UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE Approximate 1.6 50 1000 5000 Tube ■Characteristics (Typical) MTSR1260/MTSR1260F Symbol Test Conditions Characteristic Values typ. max. Unit TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 1.5 uA uA mA IR IF= A; TVJ=150oC T VJ=25oC 1.65
2.00 VVF
2.5 K/W0.5 VR=350V; IF=9A; -diF/dt=64A/us; L<0.05uH; TVJ=100oC trr IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC ns IRM 2.8 A VTO For power-loss calculations only 0.98 V rT 28.7 m TVJ=TVJM 2.5_ Fig. 7 Transient thermal impedance junction to case. MTSR1260/MTSR1260F http://www.lgesemi .com Revision:20230407-P2 mail:lge@lgesemi.com
FIG.5: Diagram of circuit and Testing wave form of reverse reco very time -0.25A -1.0A +0.5A 1cm SET TIME BASE FOR 5/10ns/cm (-) (+) (-) (+) 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) DUT NONINDUCTIVE NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) FIG.3: Forward Voltage TJ=25℃ Pulse width=300us 1% Duty Cycle 0.01 1.4 0.1 1.0 2.01.6 1.8 100 175 S ingle Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 100 Average Forward Output Current (A) Ambient Temperature (℃) FIG.1: Io-Ta Curve Peak Forward Surge Current (A) Number of Cycles FIG.2: Forward Surge Current Capability 8.3ms Single Half Sine Wave JEDEC Method 12 4 6 8 1 0 2 0 4 0 6 0 80 100 100 120 Tj=25℃ 0.001 0.01 0 20 40 60 80 100 0.1 1.0 100 FIG.4: Typical Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (uA) Tj=125℃ Tj=100℃ MTSR1260/MTSR1260F http://www.lgesemi .com Revision:20230407-P3 mail:lge@lgesemi.com
■Outline Dimensions ITO-220AC Dim Min Max A 9.8 10.2 B 2.25 2.75 C 2.95 3.45 D 14.75 15.25 E 3.5 4.1 F 0.45 0.75 G 0.45 0.75 H 13.35 14.15 I 4.97 5.23 J 4.3 4.8 K 2.5 2.74 L 2.58 2.82 M 1.03 1.43 A C K J F L B D E G H I ITO-220AC Dimensions in millimeters M A C K J F L B D E G H I TO-220AC Dimensions in millimeters TO-220AC Dim Min Max A 9.95 10.35 B 2.55 2.95 C 3.75 4.05 D 14.95 15.25 E 3.75 4.25 F 0.26 0.5 G 0.68 0.94 H 13.3 13.9 I 4.86 5.26 J 4.38 4.78 K 1.14 1.4 L 2.37 2.79 MTSR1260/MTSR1260F http://www.lgesemi .com Revision:20230407-P4 mail:lge@lgesemi.com