MSS40 STMICROELECTRONICS | Alldatasheet

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September 2000 - Ed: 3 MAIN FEATURES:

DESCRIPTION

MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity. They are suitable for high power applications such as solid state relays, heating control systems, welding equipment, motor control circuits... The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734). Symbol Value Unit IT(RMS) 55 and 70 A VDRM /VRRM 800 and 1200 V IGT 50 mA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit MSS40 MSS50 IT(RMS) RMS on-state current Tc = 80 °C 55 ATc = 85 °C 70 ITSM Non repetitive surge peak on-state current tp = 16.7 ms Tj = 25°C 420 630 A tp = 20 ms 400 600 I²tI ²t Value for fusing tp = 10 ms Tj = 25°C 800 1800 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V G2 G1 ISOTOP® ISOTOP is a registred trademark of STMicroelectronics PIN CONNECTIONS A1 A2 1: Thyristor 2 Anode (A2) 2: Thyristor 2 Gate (G2) 3: Thyristor 1 Anode (A1) 4: Thyristor 1 Gate (G1)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES PRODUCT SELECTOR

ORDERING INFORMATION

VD = 12 V RL = 33 Ω MIN. 5 mA MAX. 50 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 80 mA IL IG = 1.2 IGT MAX. 120 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 80 A tp = 380 µs Tj = 25°C MAX. 1.7 - V ITM = 100 A tp = 380 µs - 1.7 Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V R d Dynamic resistance Tj = 125°C MAX. 11 7 m Ω IDRM IRRM VDRM / VRRM RATED Tj = 25°C MAX. 20 µA Tj = 125°C 10 mA Symbol Parameter Value Unit R th(j-c) Junction to case (AC) MSS40 0.6 °C/W MSS50 0.45 Part Number Voltage (xxx) Sensitivity Package

800 V 1200 V

MSS40-xxx X X 50 mA ISOTOP TM MSS50-xxx X X 50 mA ISOTOP TM MSS 40 - 800 SCR MODULE SERIES CURRENT: 40: 55A 50: 70A VOLTAGE: 800: 800V 1200: 1200V

Note: xxx = voltage Part Number Marking Weight Base Quantity Packing mode MSS40-xxx MSS40-xxx 27.0 g 10 T ube MSS50-xxx MSS50-xxx 27.0 g 10 T ube Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: RMS on-state current versus case temperature. Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). 0 1 02 03 04 05 06 07 08 00 100 P(W) a = 180° MSS40 MSS50 180° a a IT(RMS)(A) 0 25 50 75 100 125 1500 IT(RMS)(A) a =180° MSS40 MSS50 Tcase(°C) 1E-3 1E-2 1E-1 1E+0 1E+10.1 0.2 0.5 1.0 K = [Zth(j-c)/Rth(j-c)] tp(s) -40 -20 0 20 40 60 80 100 120 140 1600.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C] IGT IH & IL Tj(°C)

Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. Fig. 7-1: On-state characteristics (maximum values) (MSS40). Fig. 7-2: On state characteristics (maximum values) (MSS50). 1 10 100 100 200 300 400 500 600 700 ITSM(A) Non repetitiv e Tj initial = 25 °C MSS40 MSS50 MSS40 Repetitive Tcase = 80 °C MSS50 Repetitive Tcase = 85 °C Number of cycles One cycle t = 20ms ITSM(A), I t(A S)22 5000 1000 100 0.01 0.10 1.00 10.00 100 500 ITM(A) Tj = 25°C Tj max.: Vto = 0.85V Rd = 11mW Tj = Tjmax. VTM(V) 100 1000 ITM(A) Tj = 25°C Tj max.: Vto = 0.85V Rd = 7mW Tj = Tjmax. VTM(V)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com PACKAGE MECHANICAL DATA ISOTOP™ n Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recom- mended for mounting the package on the heatsink and the 4 provided screws. n The screws supplied with the package are adapted for mounting on a board (or other types of termi- nals) with a thickness of 0.6 mm min. and 2.2 mm max. REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193