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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability Heavy Three Tower Package
- Isolation Type Package
- Not ESD Sensitive Parameter Symbol Unit Repetitive peak reverse voltage V RRM V DC blocking voltage VDC V Operating temperature Tj °C
- Types from 1200 V to 1600 V VRRM
- Electrically Isolated Base Plate Conditions MSRTA200120(A)D thru MSRTA200160(A)D MSRTA200140(A)D MSRTA200160(A)D 1400 Silicon Standard Recovery Diode 14001200 Maximum ratings, at Tj = 25 °C, unless otherwise specified 1200 1600 1600 -55 to 150 -55 to 150 -55 to 150 MSRTA200120(A)D Operating temperature j C Storage temperature Tstg °C Parameter Symbol Unit Average forward current (per leg) IF(AV) A Maximum instantaneous forward voltage (per leg) μA mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc °C/W TC = 125 °C 200 200 200 Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 3000 3000 3000 A Conditions Maximum instantaneous reverse current at rated DC blocking voltage (per leg) I R VF Electrical characteristics, at Tj = 25 °C, unless otherwise specified V MSRTA200120(A)D MSRTA200140(A)D Tj = 25 °C IFM = 200 A, Tj = 25 °C 0.35 0.35 Tj = 150 °C 555 MSRTA200160(A)D 1.1 0.35 1.1 1.1 55 to 50 10 10 55 to 50 55 to 50 -55 to 150 -55 to 150 -55 to 150 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
MSRTA200120(A)D thru MSRTA200160(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. MSRTA200120(A)D thru MSRTA200160(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3