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Document overview
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- PDF pages: 3
Technical content
Features
- High Surge Capability Heavy Three Tower Package
- Isolation Type Package
- Not ESD Sensitive Parameter Symbol Unit Re petitive peak reverse voltage VRRM V Maximum ratings, at Tj = 25 °C, unless otherwise specified 600 1000 MSRTA20060(A)D Silicon Standard Recovery Diode
- Types from 600 V to 1000 V VRRM
- Electrically Isolated Base Plate MSRTA20060(A)D thru MSRTA200100(A)D MSRTA20080(A)D MSRTA200100(A)D 800 Conditions pp g DC blocking voltage VDC V Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Average forward current (per leg) IF(AV) A Maximum instantaneous forward voltage (per leg) μA mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc °C/W 1000 1.1 1.1 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 V MSRTA20060(A)D MSRTA20080(A)D 0.35 0.35 Tj = 150 °C 55 800600 1.1 Maximum instantaneous reverse current at rated DC blocking voltage (per leg) I R VF Tj = 25 °C IFM = 200 A, Tj = 25 °C MSRTA200100(A)D Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 125 °C 200 200 200 3000 A Conditions 0.35 10 10 Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 3000 3000 Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
MSRTA20060(A)D thru MSRTA200100(A)D Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. MSRTA20060(A)D thru MSRTA200100(A)D Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3