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Document overview
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- PDF pages: 3
Technical content
Features
- High Surge Capability Three Tower Package
- Isolation Type Package
- Not ESD Sensitive Parameter Symbol Unit Re petitive peak reverse voltage VRRM V Maximum ratings, at Tj = 25 °C, unless otherwise specified 1200 1600 Conditions MSRT200120(A)D MSRT200140(A)D MSRT200160(A)D 1400 MSRT200120(A)D thru MSRT200160(A)D
- Types from 1200 V to 1600 V VRRM
- Electrically Isolated Base Plate Silicon Standard Recovery Diode pp g RMS reverse voltage VRMS V DC blocking voltage VDC V Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Average forward current (per leg) IF(AV) A Maximum instantaneous forward voltage (per leg) μA mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc °C/W TC = 140 °C 200 200 200 3000 A 0.35 0.35 Tj = 150 °C Tj = 25 °C tp = 8.3 ms, half sine 3000 3000 0.35 1600 1.1 1.1 -55 to 150 555 14001200 Peak forward surge current (per leg) IFSM 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 MSRT200120(A)D MSRT200140(A)D V Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified IFM = 200 A, Tj = 25 °C 990 1131 MSRT200160(A)D 1.1 Maximum instantaneous reverse current at rated DC blocking voltage (per leg) I R VF 848 Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
MSRT200120(A)D thru MSRT200160(A)D Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. MSRT200120(A)D thru MSRT200160(A)D Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3