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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability Three Tower Package
- Isolation Type Package
- Not ESD Sensitive Parameter Symbol Unit Repetitive peak reverse voltage V RRM V RMS reverse voltage VRMS V DC blocking voltage VDC V MSRT150120(A)D thru MSRT150160(A)D
- Types from 1200 V to 1600 V VRRM
- Electrically Isolated Base Plate Silicon Standard Recovery Diode 848 Conditions MSRT150120(A)D MSRT150140(A)D MSRT150160(A)D 1400 990 1131 Maximum ratings, at Tj = 25 °C, unless otherwise specified 1200 1600 160014001200 DC blocking voltage VDC V Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Average forward current (per leg) IF(AV) A Maximum instantaneous forward voltage (per leg) μA mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc °C/W Maximum instantaneous reverse current at rated DC blocking voltage (per leg) I R VF V Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified IFM = 150 A, Tj = 25 °C MSRT150160(A)D 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 MSRT150120(A)D MSRT150140(A)D 0.40 1600 1.1 1.1 -55 to 150 555 14001200 Peak forward surge current (per leg) IFSM TC = 140 °C 150 150 150 2250 A 0.40 0.40 Tj = 150 °C Tj = 25 °C tp = 8.3 ms, half sine 2250 2250 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
MSRT150120(A)D thru MSRT150160(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. MSRT150120(A)D thru MSRT150160(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3