MSR860F LUGUANG | Alldatasheet

Document overview

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Technical content

Features

  • Adopt FRD chip
  • Low forward Voltage drop
  • Fast reverse recovery time
  • High frequency operation
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Guard ring for enhanced ruggedness and long term reliability Typical Applications Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Mechanical Data
  • Package: ITO-220AC Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
  • Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102
  • Polarity: As marked ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT MSR860F Device marking code MSR860F Repetitive Peak Reverse Voltage VRRM V 600 Average Rectified Output Current @60Hz sine wave, R-load, Tc(FIG.1) IO A 8 Surge(Non-repetitive)Forward Current @60Hz half sine-wave, 1 cycle, Ta=25℃ IFSM A 120 Current Squared Time @1ms≤t≤8.3ms Tj=25℃， I2t A2s 41 Storage Temperature Tstg ℃ -55 ~ +175 Junction Temperature Tj ℃ -55 ~ +175 Junction capacitance @4V,1MHz Cj pF 40 http://www.lgesemi.com Revision:20240607-P1 mail:lge@lgesemi.com MSR860F Ultra-Fast Recovery Diodes

■Electrical Characteristics PARAMETER SYMBOL UNIT TEST CONDITIONS Min Typ Max Instantaneous forward voltage drop per diode V FM V DC reverse current at rated DC blocking voltage per diode IRRM1 uA VRM=VRRM Tj=25℃ - - 10 IRRM2 VRM=VRRM Tj=150℃ - 40 200 Reverse Recovery Time TRR ns IF=0.5A IRM=1A IRR=0.25A Tj=25℃ - 30 35 Peak recovery current IRRM A Tj=25℃ IF=8A di/dt=-200A/us VRM=200V - 3.45 - Tj=125℃ - 6.25 - Reverse recovery charge Qrr nC Tj=25℃ - 106.58 - Tj=125℃ - 283.26 - ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT MSR860F Thermal Resistance Between junction and case R θJ-C ℃/W 4.0 Between junction and Air RθJ-A ℃/W 50 ■Ordering Information (Example) PREFERED P/N UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE MSR860F Approximate 1.6 50 1000 5000 Tube ■Characteristics (Typical) 1 2 5 10 20 50 100 100 120 8.3ms Single Half Sine-Wave JEDEC Method 140 FIG2:Surge Forward Current Capability Number of Cycles Peak Forward Surge Current (A) Case Temperature（℃） Average Forward Output Current (A) FIG1:Io -Tc Curve 1.0 50 100 150 2.0 3.0 4.0 5.0 6.0 7.0 8.0 200 TC measure point http://www.lgesemi.com Revision:20240607-P2 mail:lge@lgesemi.com MSR860F Ultra-Fast Recovery Diodes

FIG.5: Diagram of circuit and Testing wave form of reverse reco very time -0.25A -1.0A +0.5A 1cm SET TIME BASE FOR 5/10ns/cm (-) (+) (-) (+) 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) DUT NONINDUCTIVE NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω 0.2 0.4 0.60.1 0.2 0.5 1.0 5.0 0.8 1.41.00 1.2 Instantaneous Forward Current (A) FIG3: Forward Voltage Instantaneous Forward Voltage (V) 1.6 1.8 2.0 2.0 Tj=25 ℃ Tj=100℃ Tj=125℃ Tj=150℃ FIG.4: Instantaneous Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (uA) 0 20 40 60 80 100 0.01 0.1 1.0 100 Tj=125 ℃ Tj=25 ℃ Tj=100 ℃ Tj=150 ℃ http://www.lgesemi.com Revision:20240607-P3 mail:lge@lgesemi.com MSR860F Ultra-Fast Recovery Diodes

■Outline Dimensions ITO-220AC Dim Min Max A 9.8 10.2 B 2.25 2.75 C 2.95 3.45 D 14.75 15.25 E 3.5 4.1 F 0.45 0.75 G 0.45 0.75 H 13.35 14.15 I 4.97 5.23 J 4.3 4.8 K 2.5 2.74 L 2.58 2.82 M 1.03 1.43 A C K J F L B D E G H I ITO-220AC Dimensions in millimeters M ITO-220 50pcs/Tube 558×148×38 1000 565×225×170 5000 Packge Carton Size L×W×H(mm)Quatity(pcs/box)Packing Box Size L×W×H(mm) Quatity(pcs/carton) http://www.lgesemi.com Revision:20240607-P4 mail:lge@lgesemi.com MSR860F Ultra-Fast Recovery Diodes