MSR2N2222AUB MICROSEMI | Alldatasheet
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T4-LDS-0337-2, Rev. 1 (04/15/14) © 2014 Microsemi Corporation Page 1 of 7 MSR2N2222AUB / UBC Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Screened Levels: MSR QPL RANGE and RAD LEVEL Radiation Level MSR2N2222AUB UB & UBC Package Also available in: TO-206AA (TO-18) package (leaded top-hat) MSR2N2222A(L) UA package (surface mount) MSR2N2222AUA TID 100 Krad ELDRS 100 Krad
DESCRIPTION
This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N2222A TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR/MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate APPLICATIONS / BENEFITS Rad-Hard power supplies Rad-Hard motor controls General purpose switching Instrumentation Amps EPS Satellite switching power applications MAXIMUM RATINGS MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T J and TSTG -65 to +200 ºC Thermal Resistance Junction-to-Solder Pad (Infinite Sink) (see Figure 4) RӨJSP(IS) 90 ºC/W Thermal Resistance Junction-to-Ambient (see Figure 3) (1) RӨJA 325 ºC/W Total Power Dissipation: (see Figures 1 and 2) @ TA = +25 ºC @ TSP(IS) = +25 ºC PT 0.5 1.0 W Collector-Base Voltage, Emitter Open V CBO 75 V Emitter-Base Voltage, Collector Open V EBO 6 V Collector-Emitter Voltage, Base Open V CEO 50 V Collector Current, dc I C 800 mA Solder Temperature @ 10 s T SP 260 oC Notes: 1. For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute MIL- PRF-19500/255 figures 8 and 13 and use RθJA.
T4-LDS-0337-2, Rev. 1 (04/15/14) © 2014 Microsemi Corporation Page 2 of 7 MSR2N2222AUB / UBC MECHANICAL and PACKAGING CASE: Ceramic with metal lid. UBC is ceramic with ceramic lid. TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturer’s ID. TAPE & REEL option: Standard per EIA- 418D. Consult factory for quantities. WEIGHT: < 0.04 grams See Package Dimensions on last page. PART NOMENCLATURE MSR 2N2222A UB Reliability Level MSR* – 100K Rads (Si) Surface Mount package UB = metal lid UBC = ceramic lid JEDEC type number *The MSR designator is our internal part nomenclature assigned to this family of parts, in lieu of pending JANSR submissions through DLA (Defense Logistic Agency). SYMBOLS & DEFINITIONS Symbol Definition IB Base current: The value of the dc current into the base terminal. IC Collector current: The value of the dc current into the collector terminal. IE Emitter current: The value of the dc current into the emitter terminal. RG Gate drive impedance or Gate resistance VCB Collector-base voltage: The dc voltage between the collector and the base. VCBO Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. VCE Collector-emitter voltage: The dc volt age between the collector and the emitter. VCEO Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. VEB Emitter-base voltage: The dc vo ltage between the emitter and the base VEBO Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited.
T4-LDS-0337-2, Rev. 1 (04/15/14) © 2014 Microsemi Corporation Page 3 of 7 MSR2N2222AUB / UBC ELECTRICAL CHARACTERISTICS @ TA= 25 ºC unless otherwise noted. Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 50 V IC = 10 mA Collector-Base Cutoff Current ICBO nA VCB = 75 V VCB = 60 V 10 Emitter-Base Cutoff Current IEBO nA VEB = 6.0 V VEB = 4.0 V Collector-Emitter Cutoff Current ICES 50 nA VCE = 50 V ON CHARACTERISTICS (1) Forward-Current Transfer Ratio hFE IC = 0.1 mA, VCE = 10 V 50 IC = 1.0 mA, VCE = 10 V 75 325 IC = 10 mA, VCE = 10 V 100 IC = 150 mA, VCE = 10 V 100 300 IC = 500 mA, VCE = 10 V 30 Collector-Emitter Saturation Voltage VCE(sat) V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 Base-Emitter Voltage VBE(sat) V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 1.2 2.0 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Forward Current Transfer Ratio hfe 50 IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz Magnitude of Small–Signal Short-Circuit Forward Current Transfer Ratio |hfe| 2.5 IC = 20 mA, VCE = 20 V, f = 100 MHz Output Capacitance Cobo 8.0 pF VCB = 10 V, IE = 0, 100 kHz f 1.0 MHz Input Capacitance Cibo 25 pF VEB = 0.5 V, IC = 0, 100 kHz f 1.0 MHz (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t on 35 ns Turn-Off Time t off 300 ns
T4-LDS-0337-2, Rev. 1 (04/15/14) © 2014 Microsemi Corporation Page 5 of 7 MSR2N2222AUB / UBC Radiation hardness assurance The MSR series product are guaranteed in radiation with full compliance to MIL-PRF-19500 specification JANSR level and also guaranteed to meet ESCC 22900 specifications (General specifications). Radiation assurance MIL-PRF-19500 MSR parts are guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-STD-750 for total Ionizing dose. – Each wafer of each lot is tested, (note 1). The table below provides for each monitored parameters of the test conditions and the acceptance criteria ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) POST RADIATION Parameters / Test Conditions Symbol Min. Max. Unit Collector to Base Cutoff Current ICBO 20 µA nA VCB = 75 V VCB = 60 V Emitter to Base Cutoff Current IEBO 20 µA nA VEB = 6 V VEB = 4 V Collector to Emitter Breakdown Voltage V(BR)CEO 50 V IC = 10 mA Forward-Current Transfer Ratio (1) [hFE] IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V [25] [37.5] [50] [50] [15] 325 300 Collector-Emitter Saturation Voltage VCE(sat) V IC = 150 A, IB = 15 mA IC = 500 mA, IB = 50 mA 0.35 1.15 Base-Emitter Saturation Voltage VBE(sat) V IC = 150 A, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 1.38 (1) See method 1019 of MIL-STD-750 for how to determine [h FE] by first calculating the delta (1/hFE) from the pre- and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon.
T4-LDS-0337-2, Rev. 1 (04/15/14) © 2014 Microsemi Corporation Page 6 of 7 MSR2N2222AUB / UBC ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 21 samples per diffusion lot and 10 samples per wafer, one sample being kept as un- irradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. – Test of 10 pieces by wafer, 10 biased at least 80% of V(BR)CEO, 10 unbiased and 1 kept for reference – Irradiation at 0.1 rad (Si)/s – Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 20 samples comply with the post radiation electrical characteristics provided in Table 4 (post radiation electrical characteristics for the 2N2222AUB/C) – Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100°C. Radiation summary Radiation test (Note 1) 100 krad ESCC Wafer test each Part tested 10 biased + 10 unbiased Dose rate 0.1 rad/s Acceptance MIL-STD-750 method 1019 Displacement damage Optional 1. Microsemi MSR products w ill exceed required testing of ESCC basic specification 22900 POST RADIATION Table 4 Parameters / Test Conditions Symbol Min. Max. Unit Collector to Base Cutoff Current ICBO 20 µA nA VCB = 75 V VCB = 60 V Emitter to Base Cutoff Current IEBO 20 µA nA VEB = 6 V VEB = 4 V Collector to Emitter Breakdown Voltage V(BR)CEO 50 V IC = 10 mA Forward-Current Transfer Ratio (1) [hFE] IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V [25] [37.5] [50] [50] [15] 325 300 Collector-Emitter Saturation Voltage VCE(sat) V IC = 150 A, IB = 15 mA IC = 500 mA, IB = 50 mA 0.35 1.15 Base-Emitter Saturation Voltage VBE(sat) V IC = 150 A, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 1.38 1. This value is determined from ∆(1/hfe) using pre & post radiation values of hfe. [hfe] should not exceed the pre- radiation minimum hfe.
T4-LDS-0337-2, Rev. 1 (04/15/14) © 2014 Microsemi Corporation Page 7 of 7 MSR2N2222AUB / UBC PACKAGE DIMENSIONS Symbo l Dimensions Note Symbol Dimensions Note inch millimeters inch millimeters Min Max Min Max Min Max Min Max CL - 0.128 - 3.25 r - 0.008 - 0.20 CW - 0.108 - 2.74 r1 - 0.012 - 0.31 LL2 0.017 0.035 0.43 0.89 NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding not connected to lid on UBC version. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.