MSQA6V1W5 SEMITECH | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
z Small SOT-353 SMT Package z Peak Power Dissipation 200W @8 x 20 us Pulse z Low Leakage Current < 1uA @3 Volts z Fast Response Time < 1 ns z Low Capacitance z ESD Protection to IEC 61000-4-2 Level 4 z RoHS Compliant in Lead-Free Versions
Applications
z Instrumentation Equipement z Serial and Parallel Ports z Microprocessor Based Equipment z Notebooks, Desktops, Servers Absolute Maximum Ratings Parameter Symbol Value Units Peak Power Dissipation (Note 1.) @TL = 25°C PPK 200 W Power Dissipation PD 150 mW Maximum Junction Temperature TJmax 150 °C Operating Junction Temperature Range TJ -55 to 150 °C Storage Temperature Range TSTG -55 to 150 °C 1. 8 X 20 us, non–repetitive Figure 1.
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter Maximum Reverse Peak Pulse Current IPP VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VRWM (V) IR(uA) @ VRWM VBR (V) @ 1 mA VF (V) @ 200mA Capacitance @ OV Bias(pF)(note 2) Device Marking Max Max Min Nom Max Max Typ Max *Surge current waveform per Figure 1. 2. Capacitance of one diode at f=1MHz,VR=0V, TA=25°C ． Fig1. Pulse Waveform
Fig2. Power Derating Package Dimensions SOT-353 Millimeters Inches Dim MIN NOM MAX MIN NOM MAX e 0.65 Typ 0.025 Typ