MSQ175N10G

MSQ175N10G CITC | Alldatasheet

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■ Features 100V/52A• R = 17.5mΩ (max.) @ V = 10VDS(ON) GS Reliable and Rugged.• Lead free and green device available• (RoHS compliant). MSQ175N10G N-Channel Enhancement Mode MOSFET Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C ■ Application

• DC-DC converter. .• Motor control ■ Pin Description O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A PARAMETER Pulsed Drain Current(Note:1) Avalanche Energy, single pulse (Note:2) Diode Continuous Forward Current Maximum Power Dissipation Drain-Source Voltage Avalanche Current, single pulse (Note:2) Gate-Source Voltage CONDITIONS Symbol VDSS PD IAS MSQ175N10G ±25 UNIT V mJ ID A W IDM IS 169 130 100 26 A VGSS EAS W A PD V Continuous Drain Current O T = 100 CC 33 Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C Thermal Resistance-Junction to Ambient(Note:3) RθJC NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. O O 2.UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T =25 C).J 3.surface mounted on 1 inch per square pad area. O T = 25 CC O T = 25 CC O T = 25 CC O T = 100 CC O T = 25 CC O C/W Maximum Power Dissipation O T = 25 CA O T = 70 CA 3.2 Continuous Drain Current O T = 70 CA O T = 25 CA ID 9.6 A t ≤ 10s Steady State 60 Thermal Resistance-Junction to case(Note:3) 1.3 O C/W DFN5x6-8 G D SSS D DD ( 1, 2, 3 ) (5,6,7,8) (4) L=0.5mH L=0.5mH S S S G D D D D Pin 1

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Gate Resistance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(Note:4) Reverse Recovery Time Total Gate Charge Reverse Recovery Charge Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(Note:5) ■ Diode Characteristics V = 0V, I = 250µAGS DS CONDITIONS Symbol VDSS IDSS MIN. 100 TYP. MAX. UNIT V nA uA IGSS 17.5 ±100 3 V V = 80V, V = 0VDS GS V = 80V, V = 0V, T = 85°CDS GS J V = ±25V V = 0VGS DS RG Coss Crss Ω pF Ciss 100 255 2100 1V = 0V, V = 0V f = 1.0MHzGS DS V = 30V, V = 0V, f = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT V QRR VSD 0.8 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(Note:5) PARAMETER Qg 59 CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = 250µADS GS DS VGS(th) 2 4 Drain-Source On-state Resistance(Note:4) V = 10V, I = 26AGS DS RDS(on) 14.5 I = 13A, V = 0VSD GS 1.3 I = 13A, dI /dt = 100A/μsSD SD tRR nC 2730 Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = 30V, R = 30Ω, I = 1ADD L DS V =10V R = 6ΩGEN G ns 22 40 Gate-Source Charge Gate-Drain Charge V = 50V, V =10V, I =26ADS GS DS Qgs Qgd nC NOTE : 4.Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%. 5.Guranteed by design, not subject to production testing. mΩ ns td(on) tr td(off) tf Total Gate Charge MSQ175N10G N-Channel Enhancement Mode MOSFET Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

■ Rating and characteristic curves MSQ175N10G N-Channel Enhancement Mode MOSFET Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature Thermal Transient Impedance esistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) 0 20 40 60 80 100 120 140 160 105 TC=25o C 0 20 40 60 80 100 120 140 160 TC=25o C,VG=10V 0.1 1 10 100 500 0.1 100 600 10ms 100ms 1ms DC TC=25o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC :1.3o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 P -Power ( W tot I-Drain C urrent(A) D I-Drain C urrent(A) D Rds(on) L imit Norm alized Transient Therm al R esistance Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

■ Rating and characteristic curves MSQ175N10G N-Channel Enhancement Mode MOSFET VDS - Drain - Source Voltage (V) Output Characteristics Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage m 0 1 2 3 4 5 6 100 120 5.5V 4.5V 6VVGS=7,8,9,10V -50 -25 0 25 50 75 100 125 150 0.2 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA 0 20 40 60 80 100 VGS=10V 4 5 6 7 8 9 10 IDS=26A I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

■ Rating and characteristic curves MSQ175N10G N-Channel Enhancement Mode MOSFET Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) 0 8 16 24 32 40 400 800 1200 1600 2000 2400 2800 3200 Frequency=1MHz Crss Coss Ciss -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25o C: 14mW VGS = 10V IDS = 30A 0 7 14 21 28 35 42 VDS= 50V IDS= 26A 0.1 100 Tj=150o C Tj=25o C C-Capacitance(pF) Norm alized O n R esistance V ate-Source Vo ltage(V) G S I-Source C urrent(A) S Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

■ Test circuit and waveform MSQ175N10G N-Channel Enhancement Mode MOSFET DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

■ Package Information MSQ175N10G N-Channel Enhancement Mode MOSFET Be C A D E RECOMMENDED LAND PATTERN UNIT: mmNote : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil. SYMBOL MIN. MAX. 1.20 0.3 4.80 5.30 5.90 6.20 5.50 5.80 0.05 3.34 3.9 A B D E e F G H MILLIMETERS C 0.19 0.25

1.27 BSC

0.35 0.75 MIN. MAX. INCHES 0.047 0.012

0.050 BSC

0.007 0.010 0.189 0.209 0.232 0.244 0.217 0.228 0.002 0.014 0.030 0.131 0.154 0.90 0.035 0.51 0.020 0.30 0.012 K 0.762 0.03 0.05 0.30 0.002 0.012 0.0300.0140.750.35 D1 4.00 4.40 0.157 0.173 H F1F K G 4.6 0.77 6.1 3.6 1.270.5 0.71 1.18 1.16 0.61 D FN 5x 6-8 Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

N-Channel Enhancement Mode MOSFET ■ Carrier Tape and Reel Dimension A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 H A d Application A H T1 C d D W E1 F -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 DFN5x6-8 (mm) Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

N-Channel Enhancement Mode MOSFET ■ Tapping Direction Information DFN5x6-8 USER DIRECTION OF FEED ■ Classification Profile Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C

(Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Table 2. Pb-free Process – Classification Temperatures (Tc)

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 MSQ175N10G N-Channel Enhancement Mode MOSFET Document ID : DS-22M69 Revised Date : 2015/07/22 Revision : C