MSQ108N06G

MSQ108N06G CITC | Alldatasheet

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■ Features O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A 60V/50A• R = 10.8mΩ (max.) @ V = 10VDS(ON) GS R = 13.5mΩ (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged.• Lead free and green device available• (RoHS compliant). N-Channel Enhancement Mode MOSFET PARAMETER Pulsed Drain Current(Note:1) Avalanche Energy, single pulse (Note:2) Diode Continuous Forward Current Maximum Power Dissipation Drain-Source Voltage Avalanche Current, single pulse (Note:2) Gate-Source Voltage CONDITIONS Symbol VDSS PD IAS MSQ108N06G ±20 UNIT V mJ ID A W IDM IS 100 200 20 A VGSS EAS W A PD V Continuous Drain Current O T = 100 CC 32 20.8 Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C 60Steady State Thermal Resistance-Junction to Ambient(Note:3) RθJA NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. O O 2.UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T =25 C).J 3.surface mounted on 1 inch per square pad area. Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C ■ Application

• Secondary side synchronous rectification.
• DC-DC converter. .• Motor control
• Load Switching. O T = 25 CC O T = 25 CC O T = 25 CC O T = 100 CC O T = 25 CC t ≤ 10s O C/W Maximum Power Dissipation O T = 25 CA O T = 70 CA 1.3 Continuous Drain Current O T = 70 CA O T = 25 CA ID A ■ Pin Description DFN5x6-8 G D SSS D DD 1 2 3 (5,6,7,8) (4) L=0.5mH L=0.5mH Thermal Resistance-Junction to Case(Note:3) Steady State RθJC 2.4 O C/W MSQ108N06G N-Channel Enhancement Mode MOSFET S S S G D D D D Pin 1

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Gate Resistance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(Note:4) Reverse Recovery Time Total Gate Charge Reverse Recovery Charge Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(Note:5) ■ Diode Characteristics V = 0V, I = 250µAGS DS CONDITIONS Symbol BVDSS IDSS MIN. TYP. MAX. UNIT V nA µA IGSS 10.8 ±100 2 V V = 48V, V = 0VDS GS V = 48V, V = 0V, T = 85°CDS GS J V = ±20V, V = 0VGS DS RG Coss Crss Ω pF Ciss 105 215 2500 1V = 0V, V = 0V f = 1.0MHzGS DS V = 30V, V = 0V, f = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT ns QRR VSD 0.8 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(Note:5) PARAMETER Qg 65 CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = 250µADS GS DS VGS(th) 1 3 Drain-Source On-state Resistance(Note:4) V = 10V, I = 25AGS DS V = 4.5V, I = 25AGS DS RDS(on) 13.510.5 I = 25A, V = 0VSD GS 1.3 I = 25A, dI /dt = 100A/μsSD SD tRR nC 3500 Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = 30V, R = 30Ω, I = 1ADD L DS V =10V, R = 6ΩGEN G ns 20 36 Gate-Source Charge Gate-Drain Charge V = 30V, V =10V, I = 25ADS GS DS Qgs Qgd 8.5 nC NOTE : 4.Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%. 5.Guranteed by design, not subject to production testing. V td(on) tr td(off) tf Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C mΩ N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Rating and characteristic curves Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature Thermal Transient Impedance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) 0 20 40 60 80 100 120 140 160 TC=25o C 0 20 40 60 80 100 120 140 160 TC=25o C,VG=10V 0.01 0.1 1 10 100 300 0.1 100 600 10ms 100ms 1ms DC TC=25o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-5 1E-4 1E-3 0.01 0.1 RqJC :2.4o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 20P -Power ( W tot I-Drain C urrent(A) D I-Drain C urrent(A) D Norm alized Transient Therm al R esistance Rds(on) L imit Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Rating and characteristic curves VDS - Drain - Source Voltage (V) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage 0 1 2 3 4 5 100 120 140 3.5V 0 20 40 60 80 100 120 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=25A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA Output Characteristics 40I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Rating and characteristic curves Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25o C: 9mW VGS = 10V IDS = 25A 0.1 100 Tj=150o C Tj=25o C 0 8 16 24 32 40 400 800 1200 1600 2000 2400 2800 3200 3600 Frequency=1MHz Crss Coss Ciss 0 9 18 27 36 450 VDS=30V IDS=25A Norm alized O n R esistance I-Source C urrent(A) S C-Capacitance(pF) V ate-Source Vo ltage(V) G S Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Test circuit and waveform DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Package Information DFN5x6-8 Be C A D E RECOMMENDED LAND PATTERN UNIT: mmNote : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil. SYMBOL MIN. MAX. 1.20 0.3 4.80 5.30 5.90 6.20 5.50 5.80 0.05 3.34 3.9 A B D E e F G H MILLIMETERS C 0.19 0.25

1.27 BSC

0.35 0.75 MIN. MAX. INCHES 0.047 0.012

0.050 BSC

0.007 0.010 0.189 0.209 0.232 0.244 0.217 0.228 0.002 0.014 0.030 0.131 0.154 0.90 0.035 0.51 0.020 0.30 0.012 K 0.762 0.03 0.05 0.30 0.002 0.012 0.0300.0140.750.35 D1 4.00 4.40 0.157 0.173 H F1F K G 4.6 0.77 6.1 3.6 1.270.5 0.71 1.18 1.16 0.61 Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Carrier Tape and Reel Dimension Application A H T1 C d D W E1 F -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 DFN5x6-8 (mm) H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C8 N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

■ Tapping Direction Information DFN5x6-8 USER DIRECTION OF FEED ■ Classification Profile Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C9 N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET

(Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. Document ID : DS-22M70 Revised Date : 2015/08/03 Revision : C N-Channel Enhancement Mode MOSFET MSQ108N06G N-Channel Enhancement Mode MOSFET