MSP835 MICROSEMI | Alldatasheet
Document overview
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Technical content
8 Amp Schottky Rectifier
Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A 188 -260 4.78 6.50 Dia. Cc .285 375 7.24 9.52 aN c ¥
3 PLASTIC D0201AD
—Lo . . 5 Moning 5 Repetitive © Schottky Barrier Rectifier C Meroseri Voltoce Voltore © Guard Ring Protection atalog Number 9 9 e Low Forward Voltage MSP835 35V 35V 150°C Junction Temperature MSP845 45V 45V @ High Current Capability e YRR 35 to 45 Volts
Electrical Characteristics
Average forward current | F(AV) 8.0 Amps. TA = 112°C Square wave,R @JL = 9.0°C/W, L = 3/8” Moximum surge current | F(AV) 400 Amps 8.3 ms, half sine,Ty = 150°C Max peak forward voltage VFM .40 Volts IFM = 8.0A:TJ = 150°C * Max peak forward voltage VFM .52 Volts IFM = 8.0A:TJ = 25°C * Max peak reverse current IRM 2 mA VaRM, TJ = 25°C Typical junction capacitance CJ 575 pF VR = 5.0V,1J = 25°C * Pulse test: Pulse width 300 jsec, Duty cycle 2% Thermal and Mechanical Characteristics Storage temperature range TsT¢ -55°C to 150°C Operating junction temp range Ty -55°C to 150°C Maximum thermal resistance L = 3/8” ROL 9.0°C/W Junction to lead Weight .032 ounces (1.0 grams) typical 4-5-00 Rev. 1 . COLORADO a 800 Hoyt Street Broomfield, CO. 80020 jcrosemi :2% FAX: (303) 466-3775 www.microsemi.com
MSP835, MSP845 Figure 1 Figure 3 Typical Forward Characteristic Typical Junction Capacitance 1000 10,000 pS a 000 sop f+ Pe ee | a Ce) A A a a OO goon TTT PP ry a GG ‘e SSH TTT TTT om COT TIE TTT BERR ee ee —-:-- 2 S22 ee 200 8 so & gol LTT TTT TTT TT) | ° a a a 3 a a A | 3 100 Fa 78 TDs 1 10 100 att tT AT TT Reverse Voltage ~ Volts HA eo tt ALL ETT LEAL , / oe a § shee 8 80 8 eo LAE eee ee o L-lAP TTP py pe er Sao UTA TT TT ttt tt ty 2 [PUUTT TTT TTT TTT SoA TTT ET TTT TI = 20 = 10 a3 5 7 9 WW 13 15 Instantaneous Forward Voltage — Volts Figure 2 Typical Reverse Characteristics
8 SSS SSS SS SSS
— 100 a ee ! 10 eee er ¥ SSS é a Fd EE | re
2 SS SSS SS ee
Reverse Voltage — Volts 4-5-00 Rev. 1