MSMP6.0A_V01 VISHAY | Alldatasheet

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Technical content

MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor Revision: 09-Aug-2022 1 Document Number: 89457 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface-Mount TRANSZORB® Transient Voltage Suppressors LINKS TO ADDITIONAL RESOURCES

FEATURES

  • Very low profile - typical height of 0.65 mm
  • Ideal for automated placement
  • Oxide planar chip junction
  • Unidirectional polarity only
  • Peak pulse power: 150 W (10/1000 μs)
  • ESD capability: 15 kV (air), 8 kV (contact)
  • Meets MSL level 1, per J- STD-020C, LF maximum peak of 260 °C
  • AEC-Q101 qualified - Automotive ordering code: base P/NHM3 for MSMP6.0A to MSMP8.0A
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for protecting sensitive equipment against transient overvoltages. MECHANICAL DATA Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified, only available for MSMP6.0A to MSMP8.0A types Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Note
  • MSMP8.5A to MSMP20A for industrial grade only Polarity: color band denotes the cathode end Notes (1) Non-repetitive current pulse, per fig. 1 (2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal (3) Mounted on minimum recommended pad layout PRIMARY CHARACTERISTICS VBR 6.67 V to 24.5 V VWM 6.0 V to 20 V PPPM (10 x 1000 μs) 150 W TJ max. 150 °C Polarity Unidirectional Package MicroSMP (DO-219AD) MicroSMP (DO-219AD) eSMP® Series Top View Bottom View Cathode Anode 333DDD3 D 3D Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (fig. 1) P PPM (1)(2) 150 W Peak pulse current with a 10/1000 μs waveform I PPM (1) See next table A Power dissipation T M = 120 °C P D (2) 1.0 WPower dissipation T A = 25 °C P D (3) 0.5 Operating junction and storage temperature range T J, TSTG -55 to +150 °C

MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor Revision: 09-Aug-2022 2 Document Number: 89457 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 1 and derate per Fig. 3 (3) To calculate maximum clamping voltage at surge current uses the following formula: VCL max. = RD x IPP + VBR max. Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RθJA - junction to ambient (2) Units mounted on PCB with 6.0 mm x 6.0 mm copper pad areas; RθJM - junction to mount Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard Note (1) Available for MSMP6.0A to MSMP20A (2) AEC-Q101 qualified, is available for MSMP6.0A to MSMP8.0A only ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE CURRENT IR AT VWM (μA) MAXIMUM VC AT IPPM RD MAXIMUM VC AT IPPM RD 10/1000 μs 8/20 μs MIN. MAX. V C (V) I PPM (A) R D (Ω)V C (V) I PPM (A) R D (Ω) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance R θJA (1) 250 °C/WRθJM (2) 30 IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE AEC-Q101-001 Human body model (con tact mode) C = 100 pF, R = 1.5 k Ω V C H3B > 8 kV IEC 61000-4-2 (2) Human body model (air discharge mode) (1) C = 150 pF, R = 330 Ω 4> 1 5 k V ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSMP6.0A-M3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel MSMP6.0AHM3/H (2) 0.006 H 4500 7" diameter plastic tape and reel

MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor Revision: 09-Aug-2022 3 Document Number: 89457 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Pulse Waveform Fig. 2 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Fig. 5 - Power Dissipation Derating Curve Fig. 6 - Typical Transient Thermal Impedance 100 150 1.0 2.0 3.0 4.0 tr = 10 μs tr = 8 μs td = 1000 μs td = 20 μs IPPM - Peak Pul se Current (% I RSM t - Time (ms) td Peak Value I PPM Half Value - I PPM IPP TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM 0.1 0.01 0.1 100 1 10 100 1000 10 000 P PPM - Peak Pul se Power (kW) td - Pulse Width (μs) Copper Pad Areas Non-Repetitive Pulse Waveform Shown in Fig. 1 TA = 25 °C 100 0 50 75 100 125 175 Peak Pul se Power (P PP ) or Current (I PP Derating in Percentage (%) TJ - Initial Temperature (°C) 25 150 100 1000 6 8 10 12 14 16 18 20 CJ - Junction Capacitance (pF) VWM - Reverse Stand-Off Voltage (V) Measured at Stand-off Voltage, VWM Measured at Zero Bias TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.0 0.2 0.4 0.6 0.8 1.0 1.2 500 100 150 175 Ambient Temperature (°C) P D - Power Di ss ipation (W) 25 75 125 Mounted on Minimum Recommende Pad Area TA = TM, Mounted on 6.0 mm x 6.0 mm Copper Pad 1000 100 0.10.01 1 10 100 1000 t - Pulse Duration (s) Transient Thermal Impedance (°C/W) Junction to Ambient

MSMP6.0A thru MSMP20A www.vishay.com Vishay General Semiconductor Revision: 09-Aug-2022 4 Document Number: 89457 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.106 (2.70) 0.091 (2.30) 0.055 (1.40) 0.047 (1.20) Cathode Band MicroSMP (DO-219AD) 0.030 (0.75) 0.022 (0.55) 0.030 (0.75) 0.022 (0.55) 0.059 (1.50) 0.043 (1.10) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.020 (0.50) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.079 (2.00) 0.032 (0.80) 0.032 (0.80) Mounting Pad Layout 0.029 (0.73) 0.025 (0.63)

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