MSMCGLCE6.5A

MSMCGLCE6.5A MICROCHIP | Alldatasheet

Document overview

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• PDF pages: 13

Technical content

Features

• All devices are 100% surge tested.
• Low capacitance of 100 pF or less
• 3σ (sigma) lot norm screening performed on standby current (I D) for all M prefix devices
• Molding compound flammability rating: UL94V-O
• Unidirectional versions available only
• Two different terminations available in C-bend (modified J-bend with DO-214AB) or Gull- wing (DO-215AB)
• Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B for all M prefix devices
• Suppress transients up to 1,500W at 10/1000 µs (see Figure 4-1)
• Enhanced reliability screening options with M prefix are available in reference to MIL- PRF-19500. Refer to High Reliability Non-Hermetic Products Portfolio for more details on the screening options. (See Part Nomenclature for all available options.)
• RoHS compliant versions available
• Axial-lead equivalent packages for thru-hole mounting are available as MLCE6.5 to MLCE170Ae3 with 1500W rating (contact Microchip for other surface mount options.)

Figure 1. DO-215AB (SMCG) Package Figure 2. DO-214AB (SMCJ) Package SMM package identifications.

• Available in working stand-off voltage range of 6.5 to 170V
• Low capacitance for high frequency data line protection to 1 MHz
• Protection for aircraft fast data rate lines up to level 5 waveform 4 and level 2 waveform 5A in RTCA/DO-160G (also see MicroNote 130) and ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
• IEC61000-4-2 ESD 15 kV (air), 8 kV (contact)
• IEC61000-4-5 (lightning) as further detailed in LCE6.5 thru LCE170A data sheet
• T1/E1 line cards
• Base stations, WAN and XDSL interfaces
• CSU/DSU equipment

1500 W att Low Capacitance Surface Mount Transient

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 2 Table of Contents

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Maximum Ratings Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 3 1. Maximum Ratings Table 1-1. Maximum Ratings at 25 °C Unless Otherwise Stated Parameters/Test Conditions Symbol Value Unit Junction and storage temperature TJ and TSTG –65 to +150 °C Thermal resistance junction-to-lead1 RӨJL 20 °C/W Peak pulse power dissipation at 25 °C (at 10/1000 μs, see Figure 4-1, Figure 4-2, and Figure 4-3 )2 PPP 1500 W Impulse repetition rate (duty factor) df 0.01 or less % tclamping (0 volts to V(BR) min.) tclamping < 5x10–9 s Rated average power dissipation TL = +50 °C TA = 25 °C PM(AV) 5.0 1.5 W Solder temperature at 10 s TSP 260 °C Notes: 1. Typical junction to lead (tab) at mounting plane 2. With a repetition rate of 0.01% or less. When pulse testing, do not pulse in opposite direction (see Application Schematics herein and Figure 5-2 and Figure 5-3 for further protection in both directions.) 1.1. Mechanical and Packaging

• Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-0
• Terminals: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026
• Marking: Part number with abbreviated prefix (MCLC6.5A, MCLC6.5Ae3, MCLC33, MCLC33e3, etc.)
• Polarity: Cathode indicated by band
• Tape and reel option: Standard per EIA-481-B with 16 mm tape (add “TR” suffix to part number). Consult factory for quantities.
• Weight: Approximately 0.25 grams
• See Package Dimensions

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Part Nomenclature Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 4 2. Part Nomenclature Figure 2-1. Part Nomenclature 2.1. Symbols and De finitions Table 2-1. Symbols and De finitions Symbol Definition αV(BR) Temperature coefficient of breakdown voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. CT Total capacitance: The total small signal capacitance between the diode terminals of a complete device. I(BR) Breakdown current: The current used for measuring Breakdown Voltage V(BR). ID Standby current: The current through the device at working standoff voltage. IIB Inverse blocking leakage current: The current through a unidirectional-blocking low capacitance device at working inverse blacking voltage (VWIB) IPP Peak impulse current: The peak current during an impulse. PPP Peak pulse power: The peak power that can be applied for a specific pulse width and waveform. The product of IPP and VC. V(BR) Breakdown voltage: The voltage across the device at a specified current I(BR) in the breakdown region. VC Clamping voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (IPP) for a specified waveform. VPIB Peak inverse blocking voltage: Minimum breakdown voltage of the series low capacitance rectifier. VWIB Working inverse blocking voltage: The maximum-rated value of dc or peak blocking voltage that may be applied to a unidirectional-blocking low-capacitance diode in the inverse direction. Above this rated voltage, the diode is not to be surge or impulse tested for any reason. VWM Working standoff voltage: The maximum-rated value of DC or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature.

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Electrical Char act eristics Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 5 3. Electrical Char act eristics Table 3-1. Electrical Char act eristics at 25 °C Unless Otherwise Stated Part Number Working Standoff Voltage VWM Volts Breakdown Voltage V(BR) at I(BR) Volts Maximum Standby Current at VWM ID μA Maximum Clamping Voltage at IPP VC Volts Maximum Peak Pulse Current IPP at 10/1000 Amps Working Inverse Blocking Voltage VWIB Volts Peak Inverse Blocking Voltage VPIB VoltsMin. Max. mA MSMCxLCE6.5A MSMCxLCE7.0A 6.5 7.0 7.22 7.78 7.98 8.60 1000 500 11.2 12.0 100 100 100 100 MSMCxLCE7.5A MSMCxLCE8.0A 7.5 8.0 8.33 8.89 9.2 9.83 250 100 12.9 13.6 100 100 100 100 MSMCxLCE8.5A MSMCxLCE9.0A 8.5 9.0 9.44 10.0 10.4 11.1 14.4 15.4 100 100 100 MSMCxLCE10A MSMCxLCE11A 11.1 12.2 12.3 13.5 17.0 18.2 100 100 MSMCxLCE12A MSMCxLCE13A 13.3 14.4 14.7 15.9 19.9 21.5 100 100 MSMCxLCE14A MSMCxLCE15A 15.6 16.7 17.2 18.5 23.2 24.4 100 100 MSMCxLCE16A MSMCxLCE17A 17.8 18.9 19.7 20.9 26.0 27.6 100 100 MSMCxLCE18A MSMCxLCE20A 20.0 22.2 22.1 24.5 29.2 32.4 100 100 MSMCxLCE22A MSMCxLCE24A 24.4 26.7 26.9 29.5 35.5 38.9 100 100 MSMCxLCE26A MSMCxLCE28A 28.9 31.1 31.9 34.4 42.1 45.5 100 100 MSMCxLCE30A MSMCxLCE33A 33.3 36.7 36.8 40.6 48.4 53.3 28.1 100 100 MSMCxLCE36A MSMCxLCE40A 40.0 44.4 44.2 49.1 58.1 64.5 25.8 23.3 100 100 MSMCxLCE43A MSMCxLCE45A 47.8 50.0 52.8 55.3 69.4 72.7 21.6 20.6 150 150 200 200 MSMCxLCE48A MSMCxLCE51A 53.3 56.7 58.9 62.7 77.4 82.4 19.4 18.2 150 150 200 200 MSMCxLCE54A MSMCxLCE58A 60.0 64.4 66.3 71.2 87.1 93.6 17.2 16.0 150 150 200 200 MSMCxLCE60A MSMCxLCE64A 66.7 71.1 73.7 78.6 96.8 103 15.5 14.6 150 150 200 200 MSMCxLCE70A MSMCxLCE75A 77.8 83.3 85.0 92.1 113 121 13.3 12.4 150 150 200 200 MSMCxLCE80A MSMCxLCE90A 88.7 100 98.0 111 129 146 11.6 10.3 150 300 200 200

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Electrical Char act eristics Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 6 Table 3-1. Electrical Char act eristics at 25 °C Unless Otherwise Stated (c ontinued) Part Number Working Standoff Voltage VWM Volts Breakdown Voltage V(BR) at I(BR) Volts Maximum Standby Current at VWM ID μA Maximum Clamping Voltage at IPP VC Volts Maximum Peak Pulse Current IPP at 10/1000 Amps Working Inverse Blocking Voltage VWIB Volts Peak Inverse Blocking Voltage VPIB VoltsMin. Max. mA MSMCxLCE100A MSMCxLCE110A 100 110 111 122 123 135 162 178 9.3 8.4 300 300 200 400 MSMCxLCE120A MSMCxLCE130A 120 130 133 144 147 159 193 209 7.8 7.2 300 300 400 400 MSMCxLCE150A MSMCxLCE160A 150 160 167 178 185 197 243 259 6.2 5.8 300 300 400 400 MSMCxLCE170A 170 189 209 1 5 275 5.4 300 400 Notes: 1. Normal selection criteria for TVS devices is by working standoff voltage (VWM) and should be equal or greater than DC or continuous peak operating voltage. 2. TVS devices are tested to maximum peak pulse current (I PP) with clamping voltage monitored. This surge capability is one of the most significant electrical characteristics of the device and should be considered as part of customer quality inspections. Test in TVS avalanche direction. Do not pulse in “forward” direction. See Application Schematics. 3. Maximum capacitance of MLCE series at 0 Volts: – is 100 pF for V WM 6.5 to 58V – is 90 pF for V WM 60 to 170V 4. V WIB is at Inverse Blocking Leakage Current (IIB) of 10 µA.

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Graphs Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 8 Figure 4-3. Der ating Curve

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Pad Layout Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 11 7. Pad Layout Figure 7-1. Pad Layout SMCG (DO-215AB) Ltr Inch Millimeters A 0.510 12.95 B 0.110 2.79 C 0.150 3.81 SMCJ (DO-214AB) Ltr Inch Millimeters A 0.390 9.90 B 0.110 2.79 C 0.150 3.81

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3

Revision History

© 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 12 8. Revision History Revision Level Date Description C 01/2026 Updated Table 3-1. B 02/2024 Updated Table 2-1 and Table 3-1. A 10/2023 Initial revision.

MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 13 Microchip In f ormation Trademarks The “Microchip” name and logo, the “M” logo, and other names, logos, and brands are registered and unregistered trademarks of Microchip Technology Incorporated or its affiliates and/or subsidiaries in the United States and/or other countries (“Microchip Trademarks”). Information regarding Microchip Trademarks can be found at https://www.microchip.com/en-us/about/legal- information/microchip-trademarks. ISBN: 979-8-3371-2309-7 Legal Notice This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this information in any other manner violates these terms. Information regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. Contact your local Microchip sales office for additional support or, obtain additional support at www.microchip.com/en-us/support/design-help/ client-support-services. THIS INFORMATION IS PROVIDED BY MICROCHIP “AS IS”. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NON-INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PERFORMANCE. IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSEQUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP’S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip Devices Code Pr ot ection Feature Note the following details of the code protection feature on Microchip products:

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