MSM30N03G

MSM30N03G CITC | Alldatasheet

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Document ID : DS-22M87 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET The MSM30N03G uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. The MSM30N03G meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved. □ Low On-Resistance 「 Low Miller Charge □ Low Input Capacitance 「 100% EAS and 100% Rg Guaranteed Package Dimensions Package Dimensions Green Device Available Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID @TA=25℃ A ID @TA=70℃ 15.4 A Pulsed Drain Current1 IDM A Continuous Drain Current3 ID @TC=25℃ A ID @TC=70℃ A Total Power Dissipation PD @TC=25℃ 37.8 W PD @TA=25℃ 3.5 W Single Pulse Avalanche Energy, L=0.1mH EAS mJ Single Pulse Avalanche Current, L=0.1mH IAS A Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ +150 ℃ Thermal Data Parameter Symbol Conditions Max. Value Unit Thermal Resistance Junction-ambient2 RθJA t ≤ 10s 35 ℃/W Thermal Resistance Junction-ambient2 Steady State 80 ℃/W Thermal Resistance Junction-case2 RθJC Steady State 3.3 ℃/W REF. Millimeter REF. Millimeter Min. Nom. Max. Min. Nom. Max. C 0.10 0.15 0.25 e 0.65 BSC 12∘ E 3.20 3.30 3.40 M - - 0.15 BVDSS RDS(ON) ID 30V 6mΩ 40A3 Features: Description:

Document ID : DS-22M87 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (Tj = 25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1.2 - 2.5 V VDS=VGS, ID=250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 uA VDS=24V, VGS=0 Static Drain-Source On-Resistance RDS(ON) - 4.7 6 mΩ VGS=10V, ID=12A - 6.7 8 VGS=4.5V, ID=10A Total Gate Charge Qg - 13 - nC ID=12A VDS=15V VGS=4.5V Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Change Qgd - 5.5 - Turn-on Delay Time Td(on) - 31 - ns VDS=15V ID=12A VGS=4.5V RG=3Ω Rise Time Tr - 25 - Turn-off Delay Time Td(off) - 27 - Fall Time Tf - 18 - Input Capacitance Ciss - 1180 pF VGS=0V VDS=15V f=1.0MHz Output Capacitance Coss - 240 - Reverse Transfer Capacitance Crss - 130 - Gate Resistance Rg - - 5.0 Ω f=1.0MHz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy4 EAS 16 - - mJ VDD=20V, L=0.1mH, IAS=18A Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Diode Forward Voltage VSD - - 1.3 V IS=12A, VGS=0V Reverse Recovery Time trr - 27 - ns IF=12A, dI/dt=100A/us, TJ=25℃ Reverse Recovery Charge Qrr - 21 - nC Notes: 1. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 2. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference isθJA defined as the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by theθJC θCA user's board design. R sho wn below for single device o peration on FR-4 in still air.θJA 3. The maximum current rating is limited by package. 4. The Min. value is 100% EAS tested guarantee.

Document ID : DS-22M87 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET Fig.3 On-Resistance vs. Drain Current Fig.6 Forward Characteristics of Reverse Fig.5 Normalized VGS(th) vs. TJ Fig.4 Normalized RDSON vs. TJ Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics

Document ID : DS-22M87 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET Fig.12 Transient Thermal Impedance Fig.11 Drain Current vs. TJ Fig.10 Power Dissipation Fig.9 Safe Operating Area Fig.8 Capacitance Characteristic Fig.7 Gate Charge Characteristics

Document ID : DS-22M87 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636