MSL650N15G

MSL650N15G CITC | Alldatasheet

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N-Channel Enhancement Mode MOSFET Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1 ■ Pin Description ■ Features 150V/5A• R = 65mΩ (max.) @ V = 10VDS(ON) GS R = 80mΩ (max.) @ V = 5VDS(ON) GS Reliable and Rugged.• Lead free and green device available• (RoHS compliant). ■ Application

• DC-DC converters switching for networking
• General purpose switching O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A PARAMETER 300μs Pulsed Drain Current(Note:1) Diode Continuous Forward Current(Note:1) Drain-Source Voltage Gate-Source Voltage CONDITIONS Symbol VDSS PD MSL650N15G ±25 UNIT V 2.3 A W IDM IS 150 A VGSS V Maximum junction and Storage Temperature Range T , TJ STG -55 ~ +150 O C Thermal Resistance-Junction to Ambient(Note:1,2) RθJA NOTE : 1. Surface mounted on 1in pad area, t ≤ 10sec.O 2. Maximum under steady state condition is 75 C/W. V =10VGS O C/W Maximum Power Dissipation(Note:1) O T = 25 CA O T = 70 CA Continuous Drain Current(Note:1) O V =10V, T = 25 CGS A ID t ≤ 10s Steady State 65 Thermal Resistance-Junction to Lead Steady State RθJL O V =10V, T = 70 CGS A A O C/W 3.5 Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(note:3) Reverse Recovery Time(note:4) Reverse Recovery Charge(note:4) Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(note:4) ■ Diode Characteristics V = 0V, I = 250µAGS DS CONDITIONS Symbol BVDSS IDSS MIN. 150 TYP. MAX. UNIT µA IGSS ±100 V V = 120V, V = 0VDS GS V = 120V, V = 0V, T = 85°CDS GS J V = ±25V, V = 0VGS DS Coss Crss pF Ciss 135 1350 V = 30V, V = 0V, F = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT V QRR VSD 130 0.8 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(note:4) PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = 250µADS GS DS VGS(th) 2 4 Drain-Source On-state Resistance(note:4) V = 10V, I = 5AGS DS V = 5V, I =3AGS DS RDS(on) 8060 I = 5A, V = 0VSD GS 1.3 I = 5A, dI /dt = 100A/μsSD SD tRR nC Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = 30V, R = 30Ω, I = 1ADD L DS V =10V R = 6ΩGEN G ns Gate-Source Charge Gate-Drain Charge V = 30V, V =10V, I =5ADS GS DS Qgs Qgd nC NOTE : 3.Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%. 4.Guranteed by design, not subject to production testing. mΩ ns td(on) tr td(off) tf Total Gate Charge Qg 30 MSL650N15G N-Channel Enhancement Mode MOSFET nA Chip Integration Technology Corporation ■ Static Characteristics Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves MSL650N15G N-Channel Enhancement Mode MOSFET P -Power ( W tot -I-Drain C urrent(A) D -I-Drain C urrent(A) D Norm alized Transient Therm al R esistance 1.5 Rds(on)Limit Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves MSL650N15G N-Channel Enhancement Mode MOSFET -I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves MSL650N15G N-Channel Enhancement Mode MOSFET Norm alized O n R esistance -I-Source C urrent(A) S C-Capacitance(pF) ate-Source Vo ltage(V) G S Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Avalanche Test circuit and waveform MSL650N15G N-Channel Enhancement Mode MOSFET ■ Switching time test circuit and waveform Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Package Information MSL650N15G N-Channel Enhancement Mode MOSFETChip Integration Technology Corporation SOP-8 packag A B P G D C K F R x 45 J 0 ~ 10 Package Dimensions (Controlling dimensions are in millimeters) Symbol Dimensions (mm) Dimensions (inches) Minimum Maximum Minimum Maximum A 4.800 5.000 0.189 0.196 B 3.800 4.000 0.150 0.157 C 1.350 1.750 0.054 0.068 D 0.310 0.510 0.012 0.020 F 0.400 1.270 0.016 0.050 G 1.27 BSC 0.05 BSC J 0.170 0.250 0.007 0.009 K 0.100 0.250 0.004 0.008 P 5.800 6.200 0.229 0.244 R 0.250 0.500 0.010 0.019 o o o RECOMMENDED LAND PATTERN UNIT: mm 1.27 5.74 2.2 2.87 0.635 0.8 Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Carrier Tape and Reel Dimension MSL650N15G N-Channel Enhancement Mode MOSFETChip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Tapping Direction Information ■ Classification Profile SOP-8 MSL650N15G N-Channel Enhancement Mode MOSFET Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ Classification Reflow Profile MSL650N15G N-Channel Enhancement Mode MOSFET ■ Reliability Test Program ≥350 Chip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 MSL650N15G N-Channel Enhancement Mode MOSFETChip Integration Technology Corporation Document ID : DS-22M78 Revised Date : 2016/08 Revision : C1