MSL4435A

MSL4435A CITC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Document ID : DS-22M86 Revised Date : 2017/08/14 Revision : C P-Channel ENHANCEMENT MODE POWER MOSFETChip Integration Technology Corporation BVDSS RDS(ON) ID -30V 20mΩ -7.5A The MSL4435A is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The MSL4435A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current1, @VGS= -10V ID @TA=25℃ -7.5 A ID @TA=70℃ -5.8 A Pulsed Drain Current2 IDM -50 A Total Power Dissipation4 PD @TA=25℃ 2.5 W PD @TA=70℃ 1.6 W Single Pulse Avalanche Energy3, L=0.1mH EAS 72.2 mJ Single Pulse Avalanche Current, L=0.1mH IAS -38 A Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ +150 Thermal Data Parameter Symbol Max. Value Unit Thermal Resistance Junction-ambient1 RθJA ℃/W Thermal Resistance Junction-ambient1 RθJA ℃/W REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.51 C 3.80 4.00 L 1.35 1.75 D 0 8 J 0.40 REF. E 0.40 0.90 K 45 REF F 0.19 0.25 G 1.27 TYP. □ Advanced high cell density Trench technology □ Excellent CdV/dt effect decline 「 Super Low Gate Charge 「 100% EAS Guaranteed □ Green Device Available Features: Description: o o o

Document ID : DS-22M86 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET h Electrical Characteristics (Tj = 25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 17 - S VDS=-5V, ID=-6A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ?20V Drain-Source Leakage Current(Tj=25℃) IDSS - - -1 uA VDS=-24V, VGS=0 Drain-Source Leakage Current(Tj=55℃) - - -5 uA VDS=-24V, VGS=0 Static Drain-Source On-Resistance2 RDS(ON) - - 20 mΩ VGS=-10V, ID=-6A - - 32 VGS=-4.5V, ID=-4A Total Gate Charge Qg - 12.6 nC ID=-6A VDS=-15V VGS=-4.5V Gate-Source Charge Qgs - 4.8 Gate-Drain (“Miller”) Change Qgd - 4.8 Turn-on Delay Time Td(on) - 4.6 ns VDS=-15V ID=-6A VGS=-10V RG=3.3Ω Rise Time Tr - 14.8 Turn-off Delay Time Td(off) - 41 Fall Time Tf - 19.6 Input Capacitance Ciss - 1345 - pF VGS=0V VDS=-15V f=1.0MHz Output Capacitance Coss - 194 - Reverse Transfer Capacitance Crss - 158 - Gate Resistance Rg - 13 - Ω f=1.0MHz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy5 EAS 36.45 - - mJ VDD=-25V, L=0.1mH, IAS=-27A Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Diode Forward Voltage2 VSD - - -1.2 V IS=-1A, VGS=0V, TJ=25℃ Continuous Source Current1,6 IS - - -7.5 A VG=VD=0V, Force Current Pulsed Source Current2,6 ISM - - -50 A Reverse Recovery Time trr - 16.3 - ns IF=-6A, dI/dt=100A/us, TJ=25℃ Reverse Recovery Charge Qrr 5.9 - nC Notes: 1. Surface mounted on a 1 inc 2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 4. The power dissipation is limited by 150℃ junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

Document ID : DS-22M86 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET - V DS Drain-t o-Source Voltage (V) Fig.1 Typical Output Characteristics - V GS Gate-to-source Voltage (V) Fig.2 On-Resistance vs. G-S Voltage T J Junction Temperature (℃) Fig.3 Normalized VGS(th) vs. TJ 1.5 1.0 0.5 0 0.5 1 1.5 2 2.5 3 2.0 1.5 1.0 4 6 8 10 0 0.5 -50 0 50 100 150 -50 0 50 100 150 100 0.1 0.01 0.01 0.1 1 10 100 - V SD Source-t o-Drain Voltage (V) Fig.6 Forward Characteristics of Reverse - V DS Drain-t o-source Voltage (V) Fig.5 Safe Operating Area T J Junction Temperature (℃) Fig.4 Normalized R DSON vs. TJ - I D Drain Current (A) V GS(th) (Normalized) R DS(ON) On-Resistance (mΩ) Normalized On-Resistance - I D Drain Current (A) I S Source Current (A)

Document ID : DS-22M86 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET 0 5 10 15 20 25 30 10000 1000 100 1 5 9 13 17 21 25 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Fig.11 Unclamped Inductive Switching WaveformFig.10 Switching Time waveform t Pulse Width (sec) Fig.9 Normalized Transient Thermal Impedance - V DS Drain-t o-source Voltage (V) Fig.8 Capacitance Characteristics Q G Gate Charge (nC) Fig.7 Gate Charge Characteristics - VGS Gate-to-source Votage(V) Capacitance (pF) ZTH-JA Normalized Transient Thermal Impedance

Document ID : DS-22M86 Revised Date : 2017/08/14 Revision : C Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636