MSL120N06G

MSL120N06G CITC | Alldatasheet

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■ Features O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A 60V/12A• R = 12mΩ (max.) @ V = 10VDS(ON) GS R = 14.5mΩ (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged.• Lead free and green device available• (RoHS compliant). MSL120N06G N-Channel Enhancement Mode MOSFET PARAMETER Pulsed Drain Current (note:1) Avalanche Energy, single pulse (note:2) Diode Continuous Forward Current Maximum Power Dissipation Drain-Source Voltage Avalanche Current, single pulse (note:2) Gate-Source Voltage CONDITIONS Symbol VDSS IAS MSL120N06G ±20 UNIT V mJ ID 3,5 A IDM IS 100 20 A VGSS EAS W A PD V Continuous Drain Current O T = 70 CA 9.5 2,2 Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C 70Steady State Thermal Resistance-Junction to Ambient(note:3) RθJA Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1 ■ Application

• Secondary side synchronous rectification.
• DC-DC converter. .• Motor control
• Load Switching. O T = 25 CA O T = 25 CA O T = 25 CA O T = 100 CA O T = 25 CA t ≤ 10s O C/W ■ Pin Description D D D D S S S GSOP -8 G D SSS D DD 1 2 3 (5,6,7,8) (4) L=0.5mH L=0.5mH NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. O O 2.UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T =25 C).J 3.surface mounted on 1 inch per square pad area.

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Gate Resistance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(note:4) Reverse Recovery Time Total Gate Charge Reverse Recovery Charge Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(note:5) ■ Diode Characteristics V = 0V, I = 250µAGS DS CONDITIONS Symbol VDSS IDSS MIN. TYP. MAX. UNIT V nA uA IGSS ±100 2 V V = 48V, V = 0VDS GS V = 48V, V = 0V, T = 85°CDS GS J V = ±20V, V = 0VGS DS RG Coss Crss Ω pF Ciss 105 215 2500 1V = 0V, V = 0V F = 1.0MHzGS DS V = 30V, V = 0V, F = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT V QRR VSD 0.8 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(note:5) PARAMETER Qg CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = 250µADS GS DS VGS(th) 1 3 Drain-Source On-state Resistance(note:4) V = 10V, I = 10AGS DS V = 4.5V, I = 8AGS DS RDS(on) 14.511 I = 5A, V = 0VSD GS 1.3 I = 10A, dI /dt = 100A/μsSD SD tRR nC 3500 Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = 30V, R = 30Ω, I = 1ADD L DS V =10V R = 6ΩGEN G ns 27 49 131 Gate-Source Charge Gate-Drain Charge V = 30V, V =10V, I =10ADS GS DS Qgs Qgd 8.5 nC NOTE : 4.Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%. 5.Guranteed by design, not subject to production testing. MSL120N06G N-Channel Enhancement Mode MOSFET mΩ ns td(on) tr td(off) tf V = 30V, V =4.5V, I = 10ADS GS DSTotal Gate Charge Total Gate Charge Qg 45 Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves N-Channel Enhancement Mode MOSFET MSL120N06G Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature Thermal Transient Impedance mal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25o C 0 20 40 60 80 100 120 140 160 TA=25o C,VG=10V 0.01 0.1 1 10 100 300 0.01 0.1 100 TA=25o C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in2 pad RqJA : 35 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 P -Power ( W tot I-Drain C urrent(A) D I-Drain C urrent(A) D Norm alized Transient Therm al R esistance Rds(on) L imit Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves MSL120N06G N-Channel Enhancement Mode MOSFET VDS - Drain - Source Voltage (V) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage 2.5V 2.8V 0 10 20 30 40 50 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=10A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA Output Characteristics I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves N-Channel Enhancement Mode MOSFET MSL120N06G Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) -50 -25 0 25 50 75 100 125 150 0.0 1.0 1.5 2.0 2.5 RON@Tj=25o C: 10mW VGS = 10V IDS = 10A 0.1 Tj=150o C Tj=25o C 0 8 16 24 32 40 400 800 1200 1600 2000 2400 2800 3200 3600 Frequency=1MHz Crss Coss Ciss 0 9 18 27 36 450 VDS=30V IDS=10A Norm alized O n R esistance I-Source C urrent(A) S C-Capacitance(pF) V ate-Source Vo ltage(V) G S Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

■ Test circuit and waveform MSL120N06G N-Channel Enhancement Mode MOSFET DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

N-Channel Enhancement Mode MOSFET ■ Package Information SOP-8 packag A B P G D C K F R x 45 J 0 ~ 10 Package Dimensions (Controlling dimensions are in millimeters) Symbol Dimensions (mm) Dimensions (inches) Minimum Maximum Minimum Maximum A 4.800 5.000 0.189 0.196 B 3.800 4.000 0.150 0.157 C 1.350 1.750 0.054 0.068 D 0.310 0.510 0.012 0.020 F 0.400 1.270 0.016 0.050 G 1.27 BSC 0.05 BSC J 0.170 0.250 0.007 0.009 K 0.100 0.250 0.004 0.008 P 5.800 6.200 0.229 0.244 R 0.250 0.500 0.010 0.019 o o o RECOMMENDED LAND PATTERN UNIT: mm 1.27 5.74 2.2 2.87 0.635 0.8 Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

N-Channel Enhancement Mode MOSFET ■ Carrier Tape and Reel Dimension H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm) Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

N-Channel Enhancement Mode MOSFET ■ Tapping Direction Information ■ Classification Profile USER DIRECTION OF FEED SOP-8 Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1

(Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 MSL120N06G N-Channel Enhancement Mode MOSFET Document ID : DS-22M68 Revised Date : 2016/08 Revision : C1