MSL049P03G

MSL049P03G CITC | Alldatasheet

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P-Channel Enhancement Mode MOSFET Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1 ■ Pin Description D D D D S S S G ■ Features -30V/-23.8A• R = 4.9mΩ (max.) @ V = -10VDS(ON) GS R = 8.2mΩ (max.) @ V = -4.5VDS(ON) GS Super high dense cell design•

• Reliable and Rugged. Lead free and green device available• (RoHS compliant). HBM ESD protection level pass 8KV.• ■ Application
• Power management in notebook computer portable equipment and battery powered system. Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A PARAMETER Pulsed Drain Current(Note:1) Avalanche Energy, single pulse (Note:2) Diode Continuous Forward Current(Note:1) Drain-Source Voltage Avalanche Current, single pulse (Note:2) Gate-Source Voltage CONDITIONS Symbol VDSS PD IAS MSL049P03G ±25 UNIT V mJ 4.2 324 A W IDM IS -28 -95 -30 -36 A VGSS EAS V 392 Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C Thermal Resistance-Junction to Ambient(Note:1,3) RθJA NOTE : 1. Surface mounted on 1in pad area, t ≤ 10sec. O O 2. UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T =25 C).J O 3.Maximum under steady state condition is 75 C/W. V =-10VGS O C/W Maximum Power Dissipation(Note:1) O T = 25 CA O T = 70 CA 2.7 Continuous Drain Current(Note:1) O V =-10V, T = 70 CGS A O V =-10V, T = 25 CGS A ID -23.8 -19 A t ≤ 10s Steady State 75 Thermal Resistance-Junction to Lead 24 O C/W L=0.5mH L=1mH Steady State RθJL L=0.5mH L=1mH G S D D ( 5,6,7,8 ) (4) (1, 2, 3) DD SS Top View of SOP-8 P- Channel MOSFET

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Gate Resistance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(note:4) Reverse Recovery Time(note:5) Reverse Recovery Charge(note:5) Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(note:5) ■ Diode Characteristics V = 0V, I = -250µAGS DS CONDITIONS Symbol BVDSS IDSS MIN. -30 TYP. MAX. UNIT µA IGSS 4.9 ±10 -30 -1.8 V V = -24V, V = 0VDS GS V = -24V, V = 0V, T = 85°CDS GS J V = ±20V, V = 0VGS DS RG Coss Crss Ω pF Ciss 1050 1120 5750 2.2V = 0V, V = 0V F = 1.0MHzGS DS V = -15V, V = 0V, F = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT V QRR VSD -0.7 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(note:5) PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = -250µADS GS DS VGS(th) -1.3 -2.3 Drain-Source On-state Resistance(note:4) V = -10V, I = -23.8AGS DS V = -4.5V, I =-10AGS DS RDS(on) 3.9 8.26 I = -1A, V = 0VSD GS -1 I = -23.8A, dI /dt = 100A/μsSD SD tRR nC Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = -15V, R = 15Ω, I = -1ADD L DS V =-10V R = 6ΩGEN G ns 157 108 Gate-Source Charge Gate-Drain Charge V = -15V, V =-10V, I =-23.8ADS GS DS Qgs Qgd nC NOTE : 4.Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%. 5.Guranteed by design, not subject to production testing. mΩ ns td(on) tr td(off) tf Total Gate Charge Qg 135 MSL049P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature Thermal Transient Impedance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) P -Power ( W tot -I-Drain C urrent(A) D -I-Drain C urrent(A) D Norm alized Transient Therm al R esistance MSL049P03G P-Channel Enhancement Mode MOSFET 0 20 40 60 80 100 120 140 160 TA=25o C 0 20 40 60 80 100 120 140 160 TA=25o C,VG=-10V 0.01 0.1 1 10 100 300 0.01 0.1 100 300 TA=25o C 10ms 300ms 1ms 100ms DC Rds(on) L imit al Resist ance 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in2 pad RqJA : 30 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves VDS - Drain - Source Voltage (V) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage Output Characteristics -I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage MSL049P03G P-Channel Enhancement Mode MOSFET - - 100 -3.5V -4V -3V 0 20 40 60 80 100 VGS=-4.5V VGS=-10V 2 3 4 5 6 7 8 9 10 IDS=-23.8A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=-250mA Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

■ Rating and characteristic curves Drain-Source On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) Norm alized O n R esistance -I-Source C urrent(A) S C-Capacitance(pF) ate-Source Vo ltage(V) G S MSL049P03G P-Channel Enhancement Mode MOSFET -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25o C: 3.9mW VGS = -10V IDS = -23.8A 0.1 100 Tj=150o C Tj=25o C 0 5 10 15 20 25 30 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency=1MHz Crss Coss Ciss 0 20 40 60 80 100 120 1400 VDS=-15V IDS=-23.8A Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

■ Test circuit and waveform MSL049P03G P-Channel Enhancement Mode MOSFET EAS VDD tAV IAS VDS tp VDSX(SUS) td(on) tr td(off) tf VGS VDS 90% 10% DUT 0.01W VDD VDS L IL RG tp VDD RD DUT VGS VDS RG tp Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

■ Package Information MSL049P03G P-Channel Enhancement Mode MOSFET SOP-8 packag A B P G D C K F R x 45 J 0 ~ 10 Package Dimensions (Controlling dimensions are in millimeters) Symbol Dimensions (mm) Dimensions (inches) Minimum Maximum Minimum Maximum A 4.800 5.000 0.189 0.196 B 3.800 4.000 0.150 0.157 C 1.350 1.750 0.054 0.068 D 0.310 0.510 0.012 0.020 F 0.400 1.270 0.016 0.050 G 1.27 BSC 0.05 BSC J 0.170 0.250 0.007 0.009 K 0.100 0.250 0.004 0.008 P 5.800 6.200 0.229 0.244 R 0.250 0.500 0.010 0.019 o o o RECOMMENDED LAND PATTERN UNIT: mm 1.27 5.74 2.2 2.87 0.635 0.8 Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 ■ Carrier Tape and Reel Dimension MSL049P03G P-Channel Enhancement Mode MOSFET Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm) H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

■ Tapping Direction Information ■ Classification Profile USER DIRECTION OF FEED SOP-8 MSL049P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1

(Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 MSL049P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1