MSKD200-16 MICROSEMI | Alldatasheet
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Technical content
Features
y Blocking voltage:800 to 1800V y Heat transfer through aluminum oxide ceramic isolated metal baseplate y Glass passivated chip y UL E243882 approved Glass Passivated Rectifier Diode Modules VRRM 800 to 1800V IFAV 200 Am p Values Symbol Conditions Min. Typ. Max. Units VFM T=25℃ IF =300A － 1.18 1.30 V IRD Tvj=150℃ VRD=VRRM － － 9 mA
MSKD200 ; MSAD200 ; MSCD200 MSKD200_MSAD200_MSCD200 - Rev2 www.microsemi.com O c t , 2 0 1 1 2/3 Performance Curves Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Zth(j-C) 0.001 0.01 0.1 1.0 10 S 100 1 10 cycles 100 50HZ Fig1. Power dissipation Fig2.Forward Current Derating Curve
0 ID 140 A 280
W 175 Pvtot
0 Tc 50 100 ℃ 150
DCsin.180 rec.120 rec.60 rec.30 DC sin.180 rec.120 rec.60 rec.30 Fig5. Forward Characteristics 0 V F 0 . 5 1 . 0 1 . 5 V 2 . 0 25℃ - - -125℃ 0.3 ℃/ W 0.15 8000 A 4000 250 A 200 150 100 ID 400 A 300 200 100 IF typ. max.
MSKD200 ; MSAD200 ; MSCD200 MSKD200_MSAD200_MSCD200 - Rev2 www.microsemi.com O c t , 2 0 1 1 3/3 Package Outline Information Dimensions in mm CASE: D2