MSI2001

MSI2001 MGCHIP | Alldatasheet

Document overview

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• PDF pages: 12

Technical content

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 1 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp p Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q OrderingpInformationp Q Q Q Q Q TypicalpApplicationpppppppppppppppppppppppp Q Q Q Q Q Q PartpNumberp Topp Markingp Ambientp TemperaturepRangep Packagep[mm]p RoHSpStatusp pMSI2001 USB2.0pHighRSpeedp(480Mbps)pAnalogpSwitch Q Q GeneralpDescriptionp Q TheQ MSI2001Q isQ aQ dual9poleQ double9throwQ (DPDT)Q analogQ deviceQ aimedQ forQ fastQ signalsQ switchingQ applicationsQ ofQ portableQ electricalQ devices.Q ItQ isQ especiallyQ designedQ forQ high9speedQ (HS)Q USB2.0Q (480Mb/s)QapplicationsQincludingQlow9QandQfull9speedQ USBQsignalingQinQmobileQphones.Q QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQ Q TheQMSI2001QfeaturesQlowQon9channelQresistanceQwithQ lowQon9channelQcapacitanceQallowingQlittleQattenuationQ andQdistortionQduringQbi9directionalQHSQsignalQrouting.Q HighQ crosstalkQ andQ off9isolationQ resultQ inQ minimumQ noiseQinterferenceQwithQgoodQsignalQintegrity.QAlsoQtheQ deviceQ featuresQ theQ wideQ bandwidthQ andQ veryQ lowQ currentQconsumptionQresultingQhighQperformanceQinQHSQ signalQswitchingQapplications.Q Q TheQ MSI2001Q isQ availableQ inQ Halogen9Free,Q RoHSQ compliantQ10Qpins,QultraQsmallQQFNQ&QMSOPQandQcanQ operateQoverQ940°CQtoQ+85°CQambientQtemperatureQ range.QForQmoreQdetailedQinformation,QpleaseQcontactQ yourQlocalQMagnaChipQsalesQofficeQinQworld9wideQorQvisitQ MagnaChip’sQwebsiteQatQwww.magnachip.com Featuresp p /bdash2Q ±8kVQ HumanQ BodyQ ModelQ (HBM)Q ESDQ protectionQonQallQpinsQ /bdash2Q LowQC ONQ:Q7pFQ(Typ)Q@Q3.6V DD Q /bdash2Q LowQR ON Q:Q4.0ΩQ(Typ)Q@Q3.0V DD Q /bdash2Q 93dBQbandwidthQ:Q720MHzQ(Typ)Q /bdash2Q LowQsupplyQcurrentQinQstandbyQmodeQ(<1 µA )QQ andQunderQwideQcontrolQvoltageQrangeQ(6µAQ@Q 2.6V DD )Q /bdash2Q HighQcrosstalkQ:Q945dBQ(Typ)Q /bdash2Q Power9OffQprotectionQ(V DD =0V)QandQPower9OnQ protectionQ(V DD ≠0V)QonQD+Q&QD9QtolerateQupQtoQ 5.25VQ /bdash2Q VDD +0.3VQsignalsQcanQbeQhandledQunderQV DD Q supplyQvoltageQconditionQ /bdash2Q Halogen9freeQ10QleadsQQFNQpackageQ&Q MSOPQpackageQQQ Applicationsp p /bdash2Q USB2.0QSwitchingQ /bdash2Q HSQdifferentialQsignalsQapplicationsQ /bdash2Q PortableQ devicesQ (CellQ phone,Q PDAs,Q NotebookQComputers)Q p DARp DBRp DB+ p DA+ p DRp D+ p VDDp=pV_BATT p pUSBpSOCKET p CONNECTION p pEMBEDDEDp STORAGEp pMULTIMEDIAp PROCESSORp USBpTRANSCEIVER p pBASEBANDp PROCESSORp USBpTRANSCEIVER p

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 2 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q PinpConfigurationp Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q QQQQQQQQQQQQQQQQQQQ Q Q QQQQQQQQQQQ Q Q Q Q PinpDescriptionp Q TruthpTablep Q Q QQQQQQQQQQQQ PinpAssignmentp Descriptionp /OEBQ OutputQEnableQBarQ(ActiveQLow)Q SELQ SelectQA/BQControlQ D+,QD9Q CommonQDataQPortsQ DA+/9,QDB+/9Q A/BQDataQPortsQ VDDQ DCQSupplyQvoltageQInputQPinQ GNDQ GroundQPinQ SELp OEBp Functionp XQ HQ DisconnectQ LQ LQ SelectQAQportQ(D+/9Q=DA+/9)Q HQ LQ SelectQBQportQ(D+/9=DB+/9)Q 11 11 22 22 33 33 44 44 55 55 11 1100 00 99 99 88 88 77 77 66 66 VDD p p GND p SEL p D+p DRp 10ppinspQFNpPackagep (ToppView)p DB+ /OEB VDD SEL DA+ DAR GND DBR D+ DR 88 88 BlockpDiagramp DAR DR DA+ DBR DB+ /OEB p SEL Controlp 10ppinspMSOPpp (ToppView)p /OEBp DB+p DBRp DA+p DARp

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 3 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp QQ AbsolutepMaximumpRatingsp(NoteQ1)p p Symbolp Parameterp Minp Maxp Unitp VDD Q DCQSupplyQVoltageQonQVDDQpinQ 90.5Q 4.6Q VQ VSEL Q ControlQInputQVoltageQ 90.5Q 4.6Q VQ VIN/OUT Q InputQVoltageQinQD*,QDA/B*Q DA/B+,QDA/B9Q 90.5Q V DD +0.3Q VQ D+,D9QwhenQV DD Q>Q0Q 90.5Q V DD +0.3Q VQ D+,D9QwhenQV DD Q=Q0Q 90.5Q 5.25Q VQ IIN/OUT Q In/OutQCurrentQinQD*,QDA/B*Q Q 50Q mAQ ESDQ HBMQ(NoteQ2)Q Q 8000Q VQMMQ(NoteQ3)Q Q 400Q CDMQ(NoteQ4)QQ Q 1500Q TSQ StorageQTemperatureQ 965Q +150Q °CQ Q Notep1 :QStressesQbeyondQtheQaboveQlistedQmaximumQratingsQmayQdamageQtheQdeviceQpermanently.QOperatingQaboveQtheQrecommendedQ conditionsQforQextendedQtimeQmayQstressQtheQdeviceQandQaffectQdeviceQreliability.QAlsoQtheQdeviceQmayQnotQoperateQnormallyQaboveQtheQ recommendedQoperatingQconditions.QTheseQareQstressQratingsQonly.Q Notep2:pESDQtestedQperQJESD22A9114E.Q Notep3 :QESDQtestedQperQJESD22A9115.Q Notep4 :QESDQtestedQperQJESD22C9101.Q QQQ Q RecommendedpOperatingpConditionsp p Symbolp Parameterp Minp Maxp Unitp VDD Q SupplyQVoltageQ 3Q 4.3Q VQ VSEL Q ControlQInputQVoltageQ(NoteQ1)Q 0Q V DD Q VQ VIN/OUT Q InputQVoltageQinQD*,QDA/B*Q 0Q V DD Q VQ TAQ OperatingQTemperatureQ 940Q +85Q °CQ p Note1:pControlQpinQinputQmustQbeQheldQ“HIGH”QorQ“LOW”QandQitQmustQnotQfloatQduringQoperation.Q Q Q DCpElectricalpCharacteristicsp Q AllQlistedQtypicalQvaluesQareQatQ25 °CQunlessQotherwiseQspecified.QBoldface QvaluesQindicateQ940 °CQtoQ+125 °CQofQT J.Q Q Symbolp Parameterp TestpConditionsp V DD (V)p Minp Typp Max p Unitp VSEL_HQ ControlQInputQHighQVoltageQ 3Q≤QVDD Q≤Q3.6VQ 3.0Q~Q3.6 Q 1.3p Q Q VQ VDDQ=Q4.3VQ 4.3Q 1.7p Q Q VQ VSEL_LQ ControlQInputQLowQVoltageQQ 3Q≤QVDD Q≤Q3.6VQ 3.0Q~Q3.6 Q Q Q 0.5p VQ VDDQ=Q4.3VQ 4.3Q Q Q 0.7p VQ ISEL Q ControlQInputQLeakageQCurrentQ 0Q<QVSEL Q≤QVDD Q 4.3Q R1p Q 1p µAQ ICC Q QuiescentQSupplyQCurrentQ V SELQ=Q0QorQVDD ,QIIN/OUTQ=Q0AQ 4.3Q Q Q 1p µAQ ICCT Q IncreaseQinQICC QonQV DD QpinQperQ ControlQVoltageQ VSELQ=Q2.6VQ 4.3Q Q Q 6p µAQ ILEAK Q OFFQStateQLeakageQCurrentQonQ D±,QDA ±,QDB ±Q 0Q<QVD±,QDA ±,QDB ±Q≤Q3.6VQQ 4.3Q R2p p 2p µAQ IOFF Q PowerQOFFQLeakageQCurrentQonQ D±Q(SeeQFigureQ1)Q VD+,D9Q=Q4.3VQ 0Q R2p p 2p µAQ RON Q On9ResistanceQ (SeeQFigureQ2)Q VIN/OUT Q=Q0.4V,QIIN/OUT Q=Q8mAQQ 3.0Q Q 4Q 6.5p Ω Q RON Q On9ResistanceQMatchQBetweenQ ChannelsQ(NoteQ1)Q VIN/OUT Q=Q0.4V,QIIN/OUT Q=Q8mAQ 3.0Q Q 0.35Q Q Ω Q RFLAT_ON Q RON QFlatnessQ(NoteQ2)Q 0Q<QV IN/OUT Q≤Q1.0V,QIIN/OUT Q=Q8mAQ 3.0Q Q 1Q Q Ω Q p Notep1:pRON(MAX)Q=Q|QR ON (Channel1)9RON (Channel2)Q|Q Notep2: QRFLAT_ON QisQdefinedQasQtheQdifferenceQbetweenQtheQmaximumQandQminimumQvalueQofQR ON QmeasuredQoverQspecifiedQV IN/OUT Qrange.Q QQQ

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 4 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q ACpElectricalpCharacteristicsp(Notep1) p p AllQlistedQtypicalQvaluesQareQatQ25 °CQunlessQotherwiseQspecified.Q Q Symbolp Parameterp TestpConditionsp V DD (V)p Minp Typp Max p Unitp Timep&pFrequencyp tON Q Turn9OnQTimeQ (SeeQFigureQ3)Q VIN/OUT Q=Q0.8V,QQ RLQ=Q50 Ω ,QCLQ=Q5pF,QQ VSEL_H Q=QVDD ,QV SEL_L Q=Q0Q 3.0Q~Q3.6 Q Q 13Q 30Q nsQ tOFF Q Turn9OffQTimeQ VIN/OUT Q=Q0.8V,QQ RLQ=Q50 Ω ,QCLQ=Q5pF,QQ VSEL_H Q=QVDD ,QV SEL_L Q=Q0Q 3.0Q~Q3.6 Q Q 12Q 25Q nsQ tPD_RISE Q tPD_FALLQ Rise/FallQPropagationQDelayQ (SeeQFigureQ4)Q RLQ=QRSQ=Q50 Ω ,QC LQ=Q5pFQ 3.3Q Q 0.25Q Q nsQ tBBM Q Break9Before9MakeQDelayQTime Q (SeeQFigureQ5)QQ RLQ=QRSQ=Q50 Ω ,QC LQ=Q5pFQ 3.0Q~Q3.6 Q Q 5Q Q nsQ tSK(O)Q OutputQSkewQbetweenQSwitches Q (SeeQFigureQ4)QQ SkewQ betweenQ SwitchQ 1Q andQ SwitchQ2Q RLQ=QRSQ=Q50 Ω ,QC LQ=Q5pFQ 3.0Q~Q3.6 Q Q 0.05Q Q nsQ tSK(P)Q OutputQSkewQofQsameQSwitchQ (SeeQFigureQ4)QQ SkewQ betweenQ OppositeQ TransitionsQinQSameQSwitchQ 3.0Q~Q3.6 Q Q 0.02Q Q nsQ BWQ 93dBQBandwidthQ (SeeQFigureQ6)QQ RLQ=QRSQ=Q50 Ω ,QC LQ=Q0pFQ 3.0Q Q 720Q Q MHzQ RLQ=QRSQ=Q50 Ω ,QC LQ=Q5pFQ Q 550Q Q Isolationp&pCrosstalkp OIRR Q OffQIsolationQQ (SeeQFigureQ8)Q fQ=Q240MHz,QR LQ=QRSQ=Q50 Ω Q Q 3.0Q Q 930Q Q dBQ XTALK Q ChannelQCrosstalkQ (SeeQFigureQ9)Q fQ=Q240MHz,QR LQ=QRSQ=Q50 Ω Q Q 3.0Q Q 945Q Q dBQ Capacitancep CIN Q ControlQPinQInputQCapacitanceQ fQ=Q240MHzQ 0Q Q 1.5Q Q p FQ CON Q ONQCapacitanceQQ (SeeQFigureQ9)Q fQ=Q240MHzQ 3.6Q Q 7Q Q pFQ COFF Q OFFQCapacitanceQQ (SeeQFigureQ10)QQ fQ=Q240MHzQ 3.6Q Q 3.5Q Q pFQ p Notep1:pTheseQparametersQareQnotQproductionQtested:QGuaranteedQbyQdesignQcorrelation.Q Q Q Q Q Q

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 5 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q TypicalpOperatingpCharacteristicspp p QQ Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q EyepdiagrampofpMSI2001 OffpIsolation Crosstalk

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 6 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q TestpDiagramsp Q Q Q Q Q Q Q Q Q Q Q Q Q Q Figurep1.plOFFp&pILEAKptestpcircuitp Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Figurep2.pR ONptestpcircuitp Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Figurep3.pt ON ,pt OFFptestpcircuitp Q Q Q Q Q IOFFQ D*Q ControlQ VDDQ=Q0Q SELQ=Q0QorQ4.3V Q 0Q<QV IN/OUTQ≤Q3.6V Q ILEAKQ D*Q ControlQ VDDQ=Q4.3VQ SEL=0QorQVDDQ 0Q<QV IN/OUTQ≤QVDD Q SEL=0QorQVDDQ Control VDDQ=Q3.6V Q VSELQ VOUT/IN p RLp CLp VSEL_HQ VSEL_LQ VOUTQ 0V Q 0.9xV OUTQ 0.1xV OUTQ 50% Q SEL p Input p Switchp Output p tON p tOFF p trise,ptfallp<p5ns p VIN/OUTQ=0.4V Q D*Q ControlQ VDDQ=Q3.0V Q SEL=0Q&QVDDQ forQDA,QDBQQ selectionQ 8mA Q VABQ RON Q=QV AB Q/Q8mA Q AQ BQ DA/B *Q VIN/OUTQ=Q4.3Q

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 7 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q p p p p p p p p Figurep4.pRise/pFallppropagationpdelayp&pSkewp Q Q Q Q Q Q Q Q Q Q Q Q Q Q p p p p Figurep5.pBreakRBeforeRMakeptime Q Q Q Q 0Q<QV IN/OUTQ≤QVDD Q SEL=0QorQVDDQ ControlQ VDDQ=Q3.6V Q VSELQ VOUT/IN p RLp CLp SEL p VOUT/IN p VDD p 0pV p tBBM p 50% Q 50% Q 50% Q DIN+ p 50% Q 50% Q 50% Q DIN Rp DA OUT+ p DA OUTRp RISE RTIMEpPROPAGATIONpDELAY p tPD_RISE+ ,pt PD_RISERp tPD_RISE+_A p tPD_RISE R_A p tPD_FALL+_A p tPD_FA LL R_A p FALL RTIMEpPROPAGATIONpDELAY p tPD_FALL+ ,pt PD_FALLRp OUTPUTpSKEWpBETWEENpSWITCHES p tSK(O) p=p|pt PD_RISE+/R_A pRptPD_RISE+/R_B p|porp|pt PD_FALL+/R_A pRptPD_FALL+/R_B p|ppp OUTPUTpSKEWpSAMEpSWITCH p tSK(P) p=p|pt PD_RISE+_A/B pRptPD_FALL+_A/B p|porp|pt PD_RISER_A/B pRptPD_FALLR_A/B p|ppp 50% Q 50% Q DB OUT+p DB OUT Rp tPD_RISE R_B p tPD_FALL+_B p tPD_FALL R_B p tPD_RISE+_Bp 0VQ↔Q400mVQ

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 8 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Figurep6.pR3dBpBandwidth Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Figurep7.pOffpIsolationp p p p p p p p p p Q Q Q Q Q Q Q Q Q Q Figurep8.pChannelpCrosstalkp DA/B* SEL ControlQ 50 Ω Q NetworkpAnalyzer p InternalQ Source Q SignalQIn Q SignalQOutQ 50 Ω Q DA+ SEL ControlQ 50 Ω Q NetworkpAnalyzer p InternalQ Source Q SignalQIn Q SignalQOutQ 50 Ω Q50 Ω Q DB9 DB+ QDA9 DA+ SEL ControlQ 50 Ω Q NetworkpAnalyzer p InternalQ Source Q SignalQIn Q SignalQOutQ 50 Ω Q50 Ω Q DB9 DB+ QDA9

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 9 MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q Q Q Q Q Q Q Q Q Q Q Q Q Q p p p Figurep9.pONpCapacitancep Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Figurep10.pOFFpCapacitancep Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q DA*QorQDB* SELQ=Q0VQorQV SEL_H Control Capacitance p Meterp fQ=Q240MHz Q DA*QorQDB* SELQ=Q0VQorQV SEL_H ControlQ Capacitance p Meterp fQ=Q240MHz Q

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 10 Q MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q PhysicalpDimensionsp p p p 10RLead,p1.4mmX1.8mmpThinpQFNp p p Dimensionsparepinpmillimeters,punlesspotherwisepnoted.p Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 11 Q MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q QPhysicalpDimensionsp Q Q Q 10RLead,p3.0mmX4.9mmpMSOPp(MoldedpSmallpOutlinepPackage)p p p Dimensionsparepinpmillimeters,punlesspotherwisepnoted.p Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q Q 8°ppp p0° pθp p0.25pBSCppL2 p p0.95pRefppL1 p 0.80pp0.60pp0.40 ppLp p0.50pBSCppep 3.10pp3.00pp2.90ppE1 p 5.10pp4.90pp4.70ppEp 3.10pp3.00pp2.90ppDp 0.23pppRpp0.08ppcp 0.33ppRp0.17ppbp 0.95pp0.85pp0.75ppA2 p 0.15pppRpp0.00ppA1 p 1.10pppRpppRppAp Max pNom pMin p Dimensionp(mm) pSymbolp mmpUNITp 1/1pSHEETp p TITLEp NApSCALEp MSOP10p pPACKAGEpDRAWINGp DATEpNAMEpDIV’Dp θθ θθp

Q Preliminaryp–pSubjectptopchangepwithoutpnoticep Feb.Q2012.QRevisionQ1.6QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQMagnaChipQSemiconductorQLtd . 12 Q MSI2001p–pUSB2.0pHighRSpeedp(480Mbps)pAnalogpSwitchp Q WorldwidepSalespSupportpLocationsp Q U.S.Ap SunnyvalepOfficep 787QN.QMaryQAve.QSunnyvaleQ CAQ94085QU.S.AQ TelQ:Q19408963695200QQ FaxQ:Q19408921392450QQ E9MailQ:Qamericasales@magnachip.comQ Q U.Kp KnyvettQHouseQTheQCauseway,QQ StainesQMiddx,QTW18Q3BA,U.K.Q TelQ:Q+44Q(0)Q1784989898000Q FaxQ:Q+44Q(0)Q178498959115Q E9MailQ:Qeuropesales@magnachip.comQ Q Japanp OsakapOfficepp 3F,QShin9OsakaQMT92QBldgQ 395936QMiyaharaQYodogawa9KuQQ Osaka,Q53290003QJapanQ TelQ:Q81969639498224Q FaxQ:Q81969639498282Q E9MailQ:Qosakasales@magnachip.comQ TaiwanpR.O.Cp 2F,QNo.61,QChowizeQStreet,QNeiQHuQ Taipei,114QTaiwanQR.O.CQQ TelQ:Q886929265797898Q FaxQ:Q886929265798751Q E9MailQ:Qtaiwansales@magnachip.comQ Q Chinap HongpKongpOfficep OfficeQ03,Q42/F,QOfficeQTowerQConventionQPlazaQ 1QHarbourQRoad,QWanchai,QHongQKongQ TelQ:Q8529282899700Q FaxQ:Q8529280298183Q E9MailQ:Qchinasales@magnachip.comQ Q ShenzhenpOfficep RoomQ1803,Q18/FQ InternationalQChamberQofQCommerceQTowerQQ FuhuaQ3Road,QFutianQDistrictQ ShenZhen,QChinaQQ TelQ:Q8697559883195561Q FaxQ:Q8697559883195565Q Q ShanghaipOfficep SteQ1902,Q1QHuaihaiQRd.Q(C)Q20021Q Shanghai,QChinaQ TelQ:Q869219637395181Q FaxQ:Q869219637396640Q Q Koreappp 891,QDaechi9Dong,QKangnam9GuQ Seoul,Q1359738QKoreaQ TelQ:Q82929690393451Q FaxQ:Q82929690393668Q~9QQ EmailQ:Qkoreasales@magnachip.comQ Q Q DISCLAIMER:p Q TheQProductsQareQnotQdesignedQforQuseQinQhostileQenvironments,Qincluding,QwithoutQlimitation,Qaircraft,QnuclearQpowerQ generation,QmedicalQappliances,QandQdevicesQorQsystemsQinQwhichQmalfunctionQofQanyQProductQcanQreasonablyQbeQ expectedQtoQresultQinQaQpersonalQinjury.QQSeller’sQcustomersQusingQorQsellingQSeller’sQproductsQforQuseQinQsuchQ applicationsQdoQsoQatQtheirQownQriskQandQagreeQtoQfullyQdefendQandQindemnifyQSeller.Q Q Q Q Q Q Q Q Q Q MagnaChipQreservesQtheQrightQtoQchangeQtheQspecificationsQandQcircuitryQwithoutQnoticeQatQanyQtime.QMagnaChipQdoesQnotQconsiderQresponsibilityQ forQuseQofQanyQcircuitryQotherQthanQcircuitryQentirelyQincludedQinQaQMagnaChipQproduct.QQQQQQQQQQQQisQaQregisteredQtrademarkQofQMagnaChipQ SemiconductorQLtd.QQ Q