MSG061P03G

MSG061P03G CITC | Alldatasheet

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■ Features -30V/-40A• R = 6.1mΩ (max.) @ V = -10VDS(ON) GS R = 11mΩ (max.) @ V = -4.5VDS(ON) GS HBM ESD protection level pass 8KV.• 100% UIS+R tested.g• Reliable and Rugged.• Lead free and green device available• (RoHS compliant). MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C ■ Application

• Power management in notebook computer portable equipment and battery powered system. ■ Pin Description O ■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)A PARAMETER Pulsed Drain Current(Note:2) Avalanche Energy, single pulse (Note:1) Diode Continuous Forward Current(Note:2) Maximum Power Dissipation Drain-Source Voltage Avalanche Current, single pulse (Note:1) Gate-Source Voltage CONDITIONS Symbol VDSS PD IAS MSL120N06G ±25 -40 UNIT V mJ ID 4.2 62.5 -40 A W IDM IS 182 -160 -30 27 A VGSS EAS W A PD V Continuous Drain Current(Note:2) O T = 100 CC -40 Operating and Storage Temperature Range T , TJ STG -55 ~ +150 O C Thermal Resistance-Junction to Ambient RθJA O O NOTE : 1.UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T =25 C).J 2.Package limited. O T = 25 CC O T = 25 CC O T = 25 CC O T = 100 CC O T = 25 CC O C/W Maximum Power Dissipation O T = 25 CA O T = 70 CA 2.7 Continuous Drain Current O T = 70 CA O T = 25 CA ID -21.3 -17.1 A t ≤ 10s Steady State 75 Thermal Resistance-Junction to case 2 O C/W L=0.5mH L=0.5mH P-Channel MOSFET G S D D 5,6,7,8 ) (4) (1, DD SS DFN3.3x3.3-8(Saw-EP) Steady State RθJC Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. S S S G D D D D PIN 1

O ■ Electrical characteristics(T = 25 C unless otherwise specified)A PARAMETER Gate Leakage Current Gate Resistance Input Capacitance Output Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage(Note:3) Reverse Recovery Time(Note:4) Total Gate Charge Reverse Recovery Charge(Note:4) Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(Note:4) ■ Diode Characteristics V = 0V, I = -250µAGS DS CONDITIONS Symbol BVDSS IDSS MIN. -30 TYP. MAX. UNIT V µA IGSS 6.1 ±10 -30 -1.8 V = -24V, V = 0VDS GS V = -24V, V = 0V, T = 85°CDS GS J V = ±20V, V = 0VGS DS RG Coss Crss Ω pF Ciss 470 593 2862 3V = 0V, V = 0V F = 1.0MHzGS DS V = -15V, V = 0V, F = 1.0MHzDS GS CONDITIONS Symbol MIN. TYP. MAX. UNIT V QRR VSD -0.7 CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Gate-Charge Characteristics(Note:4) PARAMETER Qg CONDITIONS Symbol MIN. TYP. MAX. UNIT V = V , I = -250µADS GS DS VGS(th) -1.3 -2.3 Drain-Source On-state Resistance(Note:3) V = -10V, I =-20AGS DS RDS(on) 4.9 I = -1A, V = 0VSD GS -1 I = -20A, dI /dt = 100A/μsSD SD tRR nC Turn on Delay Time Turn on Rise Time Turn off Delay Time Turn off Fall Time V = -15V, R = 15Ω, I = -1ADD L DS V =-10V, R = 6ΩGEN G ns Gate-Source Charge Gate-Drain Charge V = -15V, V =-10V, I =-20ADS GS DS Qgs Qgd nC NOTE : 3.Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%. 4.Guranteed by design, not subject to production testing. mΩ ns td(on) tr td(off) tf 2.8 V = -4.5V, I =-10AGS DS 8 11 Total Gate Charge V = -15V, V =-4.5V, I =-20ADS GS DS Qg 30 MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C

■ Rating and characteristic curves Power Dissipation Tj- Junction Temperature (°C) Drain Current Thermal Transient Impedance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) P -Power ( W tot -I-Drain C urrent(A) D -I-Drain C urrent(A) D Norm alized Transient Therm al R esistance 0 20 40 60 80 100 120 140 160 TC=25o C 0 20 40 60 80 100 120 140 160 TC=25o C,VG=-10V 0.01 0.1 1 10 100 300 100 500 10ms 1ms DC TC=25o C Rds(on) L imit 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-5 1E-4 1E-3 0.01 0.1 RqJC :2o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Tj- Junction Temperature (°C) MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C

■ Rating and characteristic curves VDS - Drain - Source Voltage (V) Output Characteristics Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Gate Threshold Voltage -I-Drain C urrent(A) D Rds(on)-O n-Resistance(m Ω Rds(on)-O n-Resistance(m Ω Norm alized Threshold Vo ltage Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C MSG061P03G P-Channel Enhancement Mode MOSFET -3.5V -3V 0 8 16 24 32 40 VGS=-10V VGS=-4.5V - - 2 3 4 5 6 7 8 9 10 IDS=-20A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=-250mA

■ Rating and characteristic curves Drain-Source On Resistance Tj - Junction Temperature (°C) Source-Drain Diode Forward VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) C-Capacitance(pF) Norm alized O n R esistance ate-Source Vo ltage(V) G S -I-Source C urrent(A) S MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C V DS Drain Source Voltage (V) - -- -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25o C: 4.9mW VGS = -10V IDS = -20A 0.1 Tj=150o C Tj=25o C 0 5 10 15 20 25 30 500 1000 1500 2000 2500 3000 3500 4000 4500 Frequency=1MHz Crss Coss Ciss 0 10 20 30 40 50 600 VDS=-15V IDS=-20A

■ Avalanche Test circuit and waveform MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp ■ Switching Time Test circuit and waveform

P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C A REF b D Pin 1 1.950 R e E 0.203 REF 0.008 REF SY MBO L MIN. MAX. 1.00A MILLIMETERS DFN3.3x3.3B-8_EP1_S MIN. MAX. INCHES 0.050.00 0.70 0.000 0.028 0.002 0.039 2.25 2.55 0.089 0.1E1 e 0.65 BSC 0.026 BSC 2.90 3.10 0.114 0.122 2.90 3.10 0.114 0.122 1.65 1.9 0.065 0.075D1 0.25 0.40b D E 0.010 0.016 0.020L 0.50 0.012 K 0.30 0.43 0.017 ■ Package Information

P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C ■ Carrier Tape & Reel Dimensions Application A H T1 C d D W E1 F DFN3.3x3.3B-8_EP -0.00 13.0+0.50 P0 P1 P2 D0 D1 T A0 B0 K0 (mm) B-B A-A P2 P0 B-B A-A F W T H A d

■ Taping Direction Information MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C ■ Classification Profile USER DIRECTION OF FEED Package Type Unit Quantity DFN3.3x3.3B-8_EP Tape & Reel 3000 ■ Device per reel

(Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 MSG061P03G P-Channel Enhancement Mode MOSFET Document ID : DS-22M72 Revised Date : 2015/08/18 Revision : C