MSF12N60 BWTECH | Alldatasheet
Document overview
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Technical content
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS compliant package Application
- Power Factor Correction
- LCD TV Power
- Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current -Continuous (TC=25°C) 12 A Drain Current -Continuous (TC=100°C) 7.5 A IDM Drain Current Pulsed 48 A EAS Single Pulsed Avalanche Energy 870 mJ IAR Avalanche Current 12 A EAR Repetitive Avalanche Energy 22.5 mJ dV/dt Peak Diode Recovery dV/dt 3.5 V/ns
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit PD Power Dissipation (TC = 25 °C) Power Dissipation (TC=100°C) 54 W
0.43 W/°C
TJ,TSTG Operating and Storage Temperature Range -55 to +150 °C NOTE: 1. TJ=+25°C to +150°C. 2. Repetitive rating; pulse width limited by maximum junction temperature.3. ISD=12A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C. 4. IAS=12A, VDD=50V, L=11mH, RG=25Ω, starting TJ=+25˚C. Off Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS=VGS,ID=250μA VGS=10V,ID=6A 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance -- 0.58 0.65 Ω BVDSS Drain-Source Breakdown Voltage VGS=0 V , ID=250μA 600 -- -- V △BVDSS /△TJ Breakdown Voltage Temperature Coefficient ID=250μA, Referenced IDSS Zero Gate Voltage Drain Current VDS=600V , VGS= 0 V VDS=480V , TC= 125°C -- -- 1 μA IGSSF Gate-Body Leakage Current, Forward VGS=30V , VDS=0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS=-30V , VDS=0 V -- -- -100 nA Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units CISS Input Capacitance VDS=25V, VGS=0V, f=1.0MHz -- 1760 2290 pF COSS Output Capacitance -- 182 235 pF CRSS Reverse Transfer Capacitance -- 21 28 pF Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units td(on) Turn-On Time VDS=250 V, ID=12A, RG=10Ω -- 30 70 ns tr Turn-On Time -- 85 180 ns td(off) Turn-Off Delay Time -- 140 280 ns tf Turn-Off Fall Time -- 90 190 ns Qg Total Gate Charge VDS=480V,ID=12A, VGS=10 V -- 48 63 nC Qgs Gate-Source Charge -- 8.5 -- nC Qgd Gate-Drain Charge -- 21 -- nC
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units IS Continuous Source-Drain Diode Forward Current -- -- 12 A ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 48 VSD Source-Drain Diode Forward Voltage IS=12A , VGS= 0V -- -- 1.5 V trr Reverse Recovery Time IS=12A , VGS= 0V diF/dt=100A/μs -- 460 -- ns Qrr Reverse Recovery Charge -- 4.9 -- μC
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN CURRENT AND GATE VOLTAGE FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [ MSF12N60] © Bruckewell Technology Corporation Rev. A -2014 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY , FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.