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Technical content

General Description Features This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for separate lines using only one package. These devices are ideal for situations where board space is at a premium. z Four Separate Unidirectional Configurations for Protection z Low Leakage Current < 1 μA @ 3Volts z Power Dissipation: 380mW z Small SOT - z Low Capacitance z Complies to USB 1.1 Low Speed & Speed Specifications z These are Pb-Free Devices

Applications

Complies with the following standards z Serial and Parallel Ports z Microprocessor Based Equipment IEC61000-4-2 z Notebooks, Desktops, Servers Level 4 15 kV (air discharge) z Cellular and Portable Equipment 8 kV(contact discharge MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram SOT-563 Maximum Ratings (TA=25°C) Symbol Parameter Value Units

25 W P Peak Power Dissipation(8×20μs@T=25℃) PK A

P Steady State Power-1 Diode 380 mW D Thermal Resistance, Junction-to-Ambient 327 ℃/W RθJA

3.05 Above 25℃, Derate Mw/℃

T Maximum Junction Temperature 150 ℃ Jmax TJ T Operation Junction and Storage Temperature Range -55 to +150 ℃ stg T Lead Solder Temperature(10 seconds duration) 260 ℃ L z Low Capacitance Quad Array for ESD Protection MSEMF3V3LCC WILLAS ELECTRONIC CORP.2012-09

IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF

Electrical Characteristics

V II Typ. 0v bias T RWM R Min. Typ. Max. Part Numbers V V V mA V µA pF 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For 4 diodes under power 3. Capacitance of one diode at f=1MHz,TA=25℃ Typical Characteristics Figure 1 Pulse Width Figure 2 Power Derating Curve Low Capacitance Quad Array for ESD Protection MSEMF3V3LCC WILLAS ELECTRONIC CORP.2012-09

1 0.30 0.012 2 1.02 0.040 3 0.51 0.020 4 1.40 0.055 5 0.51 0.020 Type number Marking code MSEMF3V3LCC 3C Low Capacitance Quad Array for ESD Protection MSEMF3V3LCC WILLAS ELECTRONIC CORP.2012-09 SOT-563 Mechanical Data .059(1.50) .067(1.70) .051(1.30) .043(1.10) .011(0.27) .007(0.17) .024(0.60) .020(0.50) .007(0.16) .003(0.08) .012(0.30) .059(1.50) .059(1.50) .067(1.70) Dimensions in inches and (millimeters)