MSD6N70 BWTECH | Alldatasheet
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MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 GENERAL DESCRIPTION The MSD6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications FEATURES • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant / Halogen free package available TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds 260 °C
MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Thermal Characteristics Value Symbol Parameter Min. Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case - - 2.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 700 - - V ΔBVDSS/ ΔTJ Breakdown Voltage Temperature coefficient ID = 250 uA, referenced to 25 °C - 0.70 - V/°C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 - 4.0 V VDS = 700 V, VGS = 0 V - - 1 uA IDSS Drain-Source Leakage Current VDS = 560 V, TC = 125 °C - - 10 uA IGSS Gate-Source Leakage, Forward VGS=±30 - - ±100 nA RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 3.0 A - 1.2 1.5 Ω Dynamic Characteristics Qg Total Gate Charge - 29 - Qgs Gate-Source Charge - 4.7 - Qgd Gate-Drain Charge (Miller Charge) ID=6A, VDD=560V, VGS=10V - 12.5 - nC td(on) Turn-on Delay Time - 20 - tr Rise Time - 50 - td(off) Turn-off Delay Time - 80 - tf Fall Time ID=6A, VDD=350V, VGS=10V RG=10Ω - 70 - ns Ciss Input Capacitance - 1482 - Coss Output Capacitance - 121.7 - Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz - 14 - pF
MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012
MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Package Dimensions Dimensions in Millimeters
MSD6N70 700V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012