MSD40P03 BWTECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Low rDS(on) provides higher efficiency and
- Extends battery life
- Low thermal impedance copper lead frame
- TO-252 saves board space
- Fast switching speed
- High performance trench technology
- RoHS compliant package Packing & Order Information Part No./ T：2,500/Reel Part No./ R：80/Tube , 4,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current @ TC=25°C 41 A IDM*1 Pulsed Drain Current ±40 A IS Continuous Source Current (Diode Conduction) -30 A
P-Channel 30-V (D-S) MOSFET Publication Order Number: [ MSD40P03] © Bruckewell Technology Corporation Rev. A -2014 Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit PD Power Dissipation (TC=25°C) 50 W TJ/TSTG Operating Junction and Storage Temperature -55 to +175 °C Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Duty cycle≤1% Thermal Characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Maximum Units Rthjc Typical thermal resistance 3.0 °C/W RθJA Typical thermal resistance 50 Static Characteristics Symbol Test Conditions Min Typ. Max. Units VGS VDS = VGS, ID = 250μA -1.0 -- -- V *RDS(ON) VGS = -10 V , ID = -20.5 A 33 mΩ IDSS VDS = 24 V , VGS = 0 V VDS = 24 V , VGS = 0 V , Tj = 55°C -- -- -1 uA ID(ON) VDS = -5 V, VGS = -10 V -41 -- -- A IGSS VDS = 0 V , VGS = ±20 V -- -- ±100 nA Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units td(on) VDD= -15 V, ID = -41 A, RG = 6 Ω , VGEN = -10 V RL = 15 Ω -- 15 -- ns tr -- 12 -- ns td(off) -- 62 -- ns tf -- 46 -- ns Gfs VDS = -15 V , ID = -20.5 A -- 31 -- S Qg VDS = -15 V , ID = -21 A, VGS = -4.5 V -- 15.3 -- nC Qgs -- 5.2 -- nC Qgd -- 5.8 -- nC Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units VSD IS = -41 A, VGS = 0 V -- -0.7 -- V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel 30-V (D-S) MOSFET Publication Order Number: [ MSD40P03] © Bruckewell Technology Corporation Rev. A -2014 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY , FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.