DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

MSD2N60 600V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 GENERAL DESCRIPTION The MSD2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications

FEATURES

Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.5nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V Drain Current -Continuous (T C=25℃) 2 A ID Drain Current -Continuous (T C=100℃) 1.3 A IDM D r a i n C u r r e n t - P u l s e d 8 . 0 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy 120 mJ EAR Repetitive Avalanche Energy 5.4 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns Power Dissipation (TC=25℃) 23 W PD - D e r a t e a b o v e 2 5 ℃ 0.18 W/ ℃ TJ,TSTG Operating and Storage Temperature Range –55 to + 150 ℃ TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 ℃  Drain current limited by maximum junction temperature

MSD2N60 600V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case –– 2.87 RθJA Junction-to-Ambient –– 50.0 /W℃ Electrical Characteristics (Tc=25°C unless otherwise specified) Symbol Parameter Test Conditions Min Type Max Units On Characteristics VGS Gate Threshold Voltage VDS=VGS,ID=250μA 2.0 –– 4.0 V RDS(ON) S t a t i c D r a i n - S o u r c e On-Resistance VGS=10V,ID=1.0A –– 4.0 4.7 Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0 V , ID=250μA 600 –– –– V △BVDSS /△TJ Breakdown Voltage Temperature Coefficient I D=250μA, Referenced to 25℃ –– 0.6 –– V/ ℃ VDS=600V , VGS= 0 V –– –– 10 μA IDSS Zero Gate Voltage Drain Current VDS=480V , VC= 125℃ –– –– 100 μA IGSSF Gate-Body Leakage Current, Forward V GS=30V , VDS=0 V –– –– 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS=-30V , VDS=0 V –– –– –100 nA Dynamic Characteristics Ciss Input Capacitance –– 320 420 pF Coss Output Capacitance –– 35 46 pF Crss Reverse Transfer Capacitance VDS=25V, VGS= 0 V , f=1.0MHz –– 4.5 6.0 pF Switching Characteristics td(on) Turn-On Time –– 8 30 ns tr Turn-On Rise Time –– 23 60 ns td(off) Turn-Off Delay Time –– 25 60 ns tf Turn-Off Fall Time VDS=300 V, ID= 2 A , RG=25Ω –– 28 70 ns Qg Total Gate Charge –– 9.5 13 nC Qgs Gate-Source Charge –– 1.6 –– nC Qgd Gate-Drain Charge VDS=480V,ID= 2 A , VGS=10 V –– 4.0 –– nC

MSD2N60 600V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current –– –– 2.0 ISM Pulsed Source-Drain Diode Forward Current –– –– 6.0 A VSD Source-Drain Diode Forward Voltage IS=2A, VGS=0V –– –– 1.4 V trr Reverse Recovery Time –– 230 –– ns Qrr Reverse Recovery Charge IS=2 A , VGS= 0 V diF/dt=100A/μs –– 1.0 –– μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature

Figure 11. Transient Thermal Response Curve

MSD2N60 600V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

MSD2N60 600V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Package Dimensions Dimensions in Millimeters

MSD2N60 600V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2012 Legal Disclaimer Notice Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY , FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability ar ising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.