MSD2714AT1 ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2002 May, 2002 – Rev. 1

1 Publication Order Number:

Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board TA = 25°C Derate above 25°C PD (Note 1) 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate, TA = 25°C Derate above 25°C PD (Note 2) 300 2.4 mW mW/ °C Thermal Resistance, Junction–to–Ambient R JA 625 °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C Device Package Shipping

ORDERING INFORMATION

MSD2714AT1 SC–59 CASE 318D SC–59 STYLE 1 TBD MARKING DIAGRAM 14A M COLLECTOR BASE EMITTER Preferred devices are recommended choices for future use and best overall value. http://onsemi.com 14A= Specific Device Code M = Date Code

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 – – Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 – – Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 – – Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO – – 500 nAdc Emitter Cutoff Current (VEB = 3.5 Vdc, IC = 0) IEBO – – 500 nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) hFE 90 — 180 Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE – – 0.95 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 650 – – MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C cb – – 0.7 pF Common–Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C rb – – 0.65 pF Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) rb′C c – – 9.0 ps

Figure 1. Rectangular Form Figure 2. Polar Form Figure 3. Rectangular Form Figure 4. Polar Form

1000 MHz

Figure 5. Rectangular Form Figure 6. Polar Form Figure 7. Rectangular Form Figure 8. Polar Form

http://onsemi.com PD = TJ(max) – TA R JA PD = 150°C – 25°C 370°C/W = 338 milliwatts

  • The soldering temperature and time should not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied dur- ing cooling * Soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device. INFORMATION FOR USING THE SC–59 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection SC–59 POWER DISSIPATION The power dissipation of the SC–59 is a function of the pad size. This can vary from the minimum pad size for sol- dering to the pad size given for maximum power dissipa- tion. Power dissipation for a surface mount device is deter- mined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA . Us- ing the values provided on the data sheet, PD can be calcu- lated as follows. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 338 milliwatts. The 370°C/W assumes the use of the recommended foot- print on a glass epoxy printed circuit board to achieve a power dissipation of 338 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, the power dissipation can be doubled us- ing the same footprint. interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.
  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. mm inches 0.039 1.0 0.094 0.8 2.4 0.031 0.95 0.037 0.95 0.037

40 TO 80 SECONDS

Figure 9. Typical Solder Heating Profile being used. This profile shows temperature versus time. or stainless steel with a typical thickness of 0.008 inches. board, i.e., a 1:1 registration. degrees cooler than the adjacent solder joints.

http://onsemi.com PACKAGE DIMENSIONS SC–59 CASE 318D–04 ISSUE F STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR S G H D C B L A J K DIM A MIN MAX MIN MAX INCHES 2.70 3.10 0.1063 0.1220 MILLIMETERS B 1.30 1.70 0.0512 0.0669 C 1.00 1.30 0.0394 0.0511 D 0.35 0.50 0.0138 0.0196 G 1.70 2.10 0.0670 0.0826 H 0.013 0.100 0.0005 0.0040 J 0.09 0.18 0.0034 0.0070 K 0.20 0.60 0.0079 0.0236 L 1.25 1.65 0.0493 0.0649 S 2.50 3.00 0.0985 0.1181 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.

http://onsemi.com ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone : 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MSD2714AT1/D Thermal Clad is a trademark of the Bergquist Company. Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada