MSD200 MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
y Three phase bridge rectifier y Blocking voltage: 800 to 1800V y Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate y Glass passivated chip
Applications
y Three phase rectifiers for power supplies y Rectifiers for DC motor field supplies y Battery charger rectifiers y Input rectifiers for variable frequency drives ~MSD Symbol Conditions Values Units VFM T=25℃ IFM =300A 1.55 V IRD Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤0.3 mA mA
MSD200-Rev 1 www.microsemi.com D e c , 2 0 0 9 2/4 Performance Curves Fig1. Forward Characteristics Fig3. Transient thermal impedance Fig2. Power dissipation Fig4. Max Non-Repetitive Forward Surge Current Fig5.Forward Current Derating Curve Zth(j-C) Typ. 25℃ 125℃ IF 400 A 300 200 100 0 VF 0.5 1.0 1.5 2.0 V 0.001 0.01 0.1 1 10 100 S 1 1 0 c y c l e s 1 0 0
0 T c 5 0 1 0 0 1 5 0 ° C
A 200 150 100 ID 50Hz 0.5 ℃/ W 0.25 2250 1500 750 3000 A W 480 240 P vtot
0 I D 1 0 0 2 0 0 A
MSD200-Rev 1 www.microsemi.com D e c , 2 0 0 9 3/4 Package Outline Information CASE-M3 Dimensions in mm