MSD100 MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
y Three phase bridge rectifier y Blocking voltage: 800 to 1800V y Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate y Glass passivated chip
Applications
y Three phase rectifiers for power supplies y Rectifiers for DC motor field supplies y Battery charger rectifiers y Input rectifiers for variable frequency drives ~MSD Symbol Conditions Values Units VFM T=25℃ IFM =300 A 1.9 V IRD Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤0 . 3 mA mA
M S D 1 0 0 - R e v 1 www.microsemi.com Dec, 2009 2/3 Performance Curves Fig1. Forward Characteristics Fig3. Transient thermal impedance Fig2. Power dissipation Fig4. Max Non-Repetitive Forward Surge Current Fig5.Forward Current Derating Curve Zth(j-C) Typ. 25℃ 125℃ 0 VF 0.5 1.0 1.5 2.0 V 0.001 0.01 0.1 1 10 100 S 1 1 0 c y c l e s 1 0 0 1000 500 1500 A
0 Tc 50 100 150°C
A 160 120 ID 50Hz 1.0 ℃/ W 0.5 300 A 150 IF W 250 125 P vtot
0 I D 5 0 1 0 0 A
M S D 1 0 0 - R e v 1 www.microsemi.com Dec, 2009 3/3 Package Outline Information CASE-M3 Dimensions in mm