MSCSM70HM038CAG

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Full Bridge SiC Power Module Product Overview The MSCSM70HM038CAG device is a 700 V/464 A full bridge silicon carbide (SiC) power module. All ratings at TJ = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 1

Features

The following are the key features of MSCSM70HM038CAG device:

• SiC Power MOSFET – Low R DS(on) – High temperature performance
• SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature Independent switching behavior – Positive temperature coefficient on VF
• Kelvin source for easy drive
• Low stray inductance
• M5 power connectors
• Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM70HM038CAG device:
• High efficiency converter
• Outstanding performance at high-frequency operation
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS Compliant

Applications

The following are the applications of MSCSM70HM038CAG device:

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive MSCSM70HM038CAG © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 2

1. Electrical Specifications The following sections show the electrical specifications of the MSCSM70HM038CAG device.

1.1 SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM70HM038CAG device. Table 1-1. Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VDSS Drain-Source voltage 700 V ID Continuous drain current TC = 25 °C 464 A TC = 80 °C 369 IDM Pulsed drain current 900 VGS Gate-Source voltage –10/25 V RDS(on) Drain-Source ON resistance 4.8 mΩ PD Power dissipation TC = 25 °C 1277 W The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM70HM038CAG device. Table 1-2. Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero gate voltage drain current VGS = 0 V; VDS = 700 V — — 400 µA RDS(on) Drain-Source on resistance VGS = 20 V ID = 160 A TJ = 25 °C — 3.8 4.8 mΩ VGS(th) Gate threshold voltage VGS = VDS; ID = 16 mA 1.9 2.4 — V IGSS Gate-Source leakage current VGS = 20 V; VDS = 0 V — — 400 nA MSCSM70HM038CAG Electrical Specifications © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 3

The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM70HM038CAG device. Table 1-3. Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input capacitance VGS = 0 V VDS = 700 V f = 1 MHz — 18 — nF Coss Output capacitance — 2 — Crss Reverse transfer capacitance — 0.11 — Qg Total gate charge VGS = –5 V/20 V VBus = 470 V ID = 160 A — 860 — nC Qgs Gate-source charge — 232 — Qgd Gate-drain charge — 140 — Td(on) Turn-on delay time VGS = –5 V/20 V VBus = 400 V ID = 320 A TJ = 150 °C RGON = 7 Ω RGOFF = 4 Ω — 78 — ns Tr Rise time — 125 — Td(off) Turn-off delay time — 214 — Tf Fall time 92 — Eon Turn-on energy VGS = –5 V/20 V VBus = 400 V ID = 320 A RGON = 7 Ω RGOFF = 4 Ω TJ = 150 °C — 4.1 — mJ Eoff Turn-off energy TJ = 150 °C — 7 — mJ RGint Internal gate resistance — 1.4 — Ω RthJC Junction-to-case thermal resistance — — 0.117 °C/W The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the MSCSM70HM038CAG device. Table 1-4. Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VSD Diode forward voltage VGS = 0 V; ISD = 160 A — 3.4 — V VGS = –5 V; ISD = 160 A — 3.8 — trr Reverse recovery time ISD = 160 A VGS = –5 V VR = 400 V diF/dt = 4000 A/µs — 40 — ns Qrr Reverse recovery charge — 2 — µC Irr Reverse recovery current — 76 — A MSCSM70HM038CAG Electrical Specifications © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 4

1.2 SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)

The following table lists the SiC Schottky diode ratings and characteristics of the MSCSM70HM038CAG device. Table 1-5. SiC Schottky Diode Ratings and Characteristics (Per SiC Diode) Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Peak repetitive reverse voltage — — — 700 V IRRM Reverse leakage current VR = 700 V TJ = 25 °C — 60 800 µA TJ = 175 °C — 1000 — IF DC forward current — TC = 65 °C — 200 — A VF Diode forward voltage IF = 200 A TJ = 25 °C — 1.5 1.8 V QC Total capacitive charge VR = 400 V — 532 — nC C Total capacitance f = 1 MHz, VR = 200 V — 992 — pF f = 1 MHz, VR = 400 V — 864 — RthJC Junction-to-case thermal resistance — — 0.246 °C/W

1.3 Thermal and Package Characteristics

The following table lists the package characteristics of the MSCSM70HM038CAG device. Table 1-6. Thermal and Package Characteristics Symbol Characteristic Min Max Unit VISOL RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000 — V tJ Operating junction temperature range –40 175 °C TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage case temperature –40 125 TC Operating case temperature –40 125 Torque Mounting torque To heatsink M6 3 5 N.m For terminals M5 2 3.5 Wt Package weight — 300 g MSCSM70HM038CAG Electrical Specifications © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 5

1.4 Typical SiC MOSFET Performance Curve

The following figures show the SiC MOSFET performance curves of the MSCSM70HM038CAG device. Figure 1-1. Maximum Thermal Impedance Figure 1-2. Output Characteristics, TJ = 25 °C Figure 1-3. Output Characteristics, TJ = 175 °C MSCSM70HM038CAG Electrical Specifications © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 6

1.5 Typical SiC Diode Performance Curve

The following figures show the SiC diode performance curves of the MSCSM70HM038CAG device. Figure 1-16. Maximum Thermal Impedance Figure 1-17. Forward Characteristics Figure 1-18. Capacitance vs. Reverse Voltage MSCSM70HM038CAG Electrical Specifications © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 10

1. Package Specifications The following section shows the package specification of the MSCSM70HM038CAG device.

2.1 Package Outline

The following figure shows the package outline drawing of the MSCSM70HM038CAG device. The dimensions in the following figure are in millimeters. Figure 2-1. Package Outline Drawing Note: See application note APT0601—Mounting Instructions for SP6 Power Modules. MSCSM70HM038CAG Package Specifications © 2021 Microchip Technology Inc. Datasheet DS00003928A-page 11

1. Revision History Revision Date Description A 04/2021 This is the first publication of this document. MSCSM70HM038CAG

Revision History

© 2021 Microchip Technology Inc. Datasheet DS00003928A-page 12

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