MSCSM70AM10CT3AG

MSCSM70AM10CT3AG MICROSEMI | Alldatasheet

Document overview

• Manufacturer or author: Unknown
• PDF pages: 15

Technical content

Datasheet sections

• 1 Revision History
• 2 Product Overview
• 2.1 Features
• 2.2 Benefits
• 2.3 Applications
• 3 Electrical Specifications
• 3.1 SiC MOSFET Characteristics (Per MOSFET)
• 3.2 SiC Schottky Diode Ratings and Characteristics
• 3.3 Thermal and Package Characteristics
• 3.4 Typical SiC MOSFET Performance Curves
• 3.5 Typical SiC Diode Performance Curves
• 4 Package Specifications
• 4.1 Package Outline Drawing

Phase Leg SiC MOSFET Power Module April 2020

1 Revision History

The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in April 2020. It is the first publication of this document. 1Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0

Revision History

2 Product Overview

The MSCSM70AM10CT3AG device is a phase leg 700 V/241 A full silicon carbide (SiC) power module. Figure 1 • MSCSM70AM10CT3AG Electric Schematic Figure 2 • MSCSM70AM10CT3AG Pinout Location All ratings at TJ = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. 2Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Product Overview

2.1 Features

The following are key features of the MSCSM70AM10CT3AG device:

• SiC Power MOSFET ◦ Low RDS(on) ◦ High-speed switching ◦ Ultra low loss
• SiC Schottky Diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• Aluminum nitride (AlN) substrate for improved thermal performance

2.2 Benefits

The following are benefits of the MSCSM70AM10CT3AG device:

• High-efficiency converter
• Outstanding performance at high-frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals for power and signal, for easy PCB mounting
• Low profile
• RoHS compliant

2.3 Applications

The MSCSM70AM10CT3AG device is designed for the following applications:

• Uninterruptible power supplies
• Switched mode power supplies
• EV motor and traction drive
• Welding converters 3Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Product Overview

3 Electrical Specifications

This section shows the electrical specifications of the MSCSM70AM10CT3AG device.

3.1 SiC MOSFET Characteristics (Per MOSFET)

The following table shows the absolute maximum ratings per SiC MOSFET of the MSCSM70AM10CT3AG device. Table 1 • Absolute Maximum Ratings UnitMax RatingsParameterSymbol V700Drain-source voltageVDSS A2411TC = 25 °CContinuous drain currentID 1921TC = 80 °C 482Pulsed drain currentIDM V–10/25Gate-source voltageVGS mΩ9.5Drain-source ON resistanceRDSon W690TC = 25 °CPower dissipationPD Note: 1. Specification of the SiC MOSFET device, but output current must be limited due to size of power connectors. The following table shows the electrical characteristics per SiC MOSFET of the MSCSM70AM10CT3AG device. Table 2 • Electrical Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol µA200VGS = 0 V; VDS = 700 VZero gate voltage drain currentIDSS mΩ9.57.5TJ = 25 °CVGS = 20 V ID = 80 A Drain-source on resistanceRDS(on) 9.5TJ = 175 °C V2.41.9VGS = VDS, ID = 8 mAGate threshold voltageVGS(th) nA200VGS = 20 V, VDS = 0 VGate-source leakage currentIGSS 4Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Electrical Specifications

The following table shows the dynamic characteristics per SiC MOSFET of the MSCSM70AM10CT3AG device. Table 3 • Dynamic Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol pF9000VGS = 0 V VDS = 700 V Input capacitanceCiss 1020Output capacitanceCoss f = 1 MHz 58Reverse transfer capacitanceCrss nC430VGS = –5 V/20 V VBus = 470 V Total gate chargeQg 116Gate-source chargeQgs ID= 80 A 70Gate-drain chargeQgd ns40VGS = –5 V/20 V VBus = 400 V Turn-on delay timeTd(on) 35Rise timeTr ID = 160 A; TJ = 150 °C 50Turn-off delay timeTd(off) RGon = 13.5 Ω; RGoff = 2.4 Ω 20Fall timeTf µJ1090TJ = 150 °CInductive switching VGS = –5 V/20 V Turn on energyEon µJ372TJ = 150 °CTurn off energyEoff VBus = 400 V ID = 160 A RGon = 13.5 Ω RGoff = 2.4 Ω Ω2.8Internal gate resistanceRGint °C/W0.217Junction-to-case thermal resistanceRthJC The following table shows the body diode ratings and characteristics per SiC MOSFET of the MSCSM70AM10CT3AG device. Table 4 • Body Diode Ratings and Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol V3.4VGS = 0 V; ISD = 80 ADiode forward voltageVSD 3.8VGS = –5V ; ISD = 80 A ns38ISD = 80 A; VGS = –5 V VR = 400 V; diF/dt = 2000 A/μs Reverse recovery timetrr nC636Reverse recovery chargeQrr A29.6Reverse recovery currentIrr 5Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Electrical Specifications

3.2 SiC Schottky Diode Ratings and Characteristics

The following table shows the SiC Schottky diode ratings and characteristics of the MSCSM70AM10CT3AG device. Table 5 • SiC Schottky Diode Ratings and Characteristics (Per SiC Diode) UnitMaxTypMinTest ConditionsCharacteristicSymbol V700Peak repetitive reverse voltageVRRM μA40030TJ = 25 °CVR = 700 VReverse leakage currentIRM 500TJ = 175 °C A100TC = 75 °CDC forward currentIF V1.81.5TJ= 25 °CIF = 100 ADiode forward voltageVF 1.9TJ = 175 °C nC266VR = 400 VTotal capacitive chargeQc pF496f = 1 MHz, VR = 200 VTotal capacitanceC 432f = 1 MHz, VR = 400 V °C/W0.456Junction-to-case thermal resistanceRthJC

3.3 Thermal and Package Characteristics

The following table shows the package characteristics of the MSCSM70AM10CT3AG device. Table 6 • Thermal and Package Characteristics UnitMaxMinCharacteristicSymbol V4000RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 HzVISOL °C175–40Operating junction temperature rangeTJ TJmax–25–40Recommended junction temperature under switching conditionsTJOP 125–40Storage temperature rangeTSTG 125–40Operating case temperatureTC N.m32M4To heatsinkMounting torqueTorque g110Package weightWt 6Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Electrical Specifications

The following table shows the temperature sensor NTC (see application note APT0406 on www.microsemi.com) of the MSCSM70AM07CT3AG device. Table 7 • Temperature Sensor NTC UnitMaxTypMinCharacteristicSymbol kΩ50Resistance at 25 °CR25 %5∆R25/R25 K3952T25 = 298.15 KB25/85 %4TC = 100 °C∆B/B 7Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Electrical Specifications

3.4 Typical SiC MOSFET Performance Curves

This sections shows the typical SiC MOSFET performance curves of the MSCSM70AM10CT3AG device. Figure 3 • Maximum Thermal Impedance Figure 5 • Output Characteristics, TJ = 175 °C Figure 4 • Output Characteristics, TJ = 25 °C Figure 7 • Transfer Characteristics Figure 6 • Normalized RDS(on) vs. Temperature 8Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Electrical Specifications

3.5 Typical SiC Diode Performance Curves

This sections shows the typical SiC diode performance curves of the MSCSM70AM10CT3AG device. Figure 18 • Maximum Thermal Impedance Figure 20 • Capacitance vs. Reverse Voltage Figure 19 • Forward Characteristics 11Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Electrical Specifications

4 Package Specifications

This section shows the package specification of the MSCSM70AM10CT3AG device.

4.1 Package Outline Drawing

This section shows the package outline drawing of the MSCSM70AM10CT3AG device. The dimensions in the following figure are in millimeters. Figure 21 • Package Outline Drawing Note: See application note 1906—Mounting Instructions for SP3F Power Modules at www.microsemi.com. 12Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Package Specifications

Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. Microsemi Corporation, a subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), and its corporate affiliates are leading providers of smart, connected and secure embedded control solutions. Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. These solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. MSCC-0344-DS-01082 13Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Legal