MSCD100-16 MICROSEMI | Alldatasheet
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Technical content
Features
y Blocking voltage:800 to 1800V y Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate y Glass passivated chip y UL E243882 approved Values Symbol Conditions Min. Typ. Max. Units VFM T=25℃ IF =300A － 1.22 1.35 V IRD Tvj=150℃ VRD=VRRM － － 5 mA
MSKD100 ; MSAD100 ; MSCD100 MSKD100_MSAD100_MSCD100 - Rev2 www.microsemi.com O c t , 2 0 1 1 2/3 Performance Curves Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current 0.001 0.01 0.1 1.0 10 S 100 1 10 cycles 100 50HZ Zth(j-C) Fig1. Power dissipation Fig2.Forward Current Derating Curve
0 ID 9 0 A 1 8 0
W 100 Pvtot
0 Tc 50 100 ℃ 150
A 100 ID DC sin.180 rec.120 rec.60 rec.30 DC sin.180 rec.120 rec.60 rec.30 Fig5. Forward Characteristics 0 V F 0 . 5 1 . 0 1 . 5 V 2 . 0 25℃ - - -125℃ 0.5 ℃/ W 0.25 3000 A 1500 400 A 300 200 100 IF max. typ.
MSKD100 ; MSAD100 ; MSCD100 MSKD100_MSAD100_MSCD100 - Rev2 www.microsemi.com O c t , 2 0 1 1 3/3 Package Outline Information CASE: D1 Dimensions in mm