MSC83301 STMICROELECTRONICS | Alldatasheet
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September 2, 1994 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .VSWR CAPABILITY ∞ :1 @ RATED CONDITIONS .HERMETIC STRIPAC PACKAGE .P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @3 . 0G H z
DESCRIPTION
The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geome- try with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated con- ditions. The MSC83301 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. PIN CONNECTION BRANDING 83301 ORDER CODE MSC8330 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 50°C) 6.0 W IC Device Current* 200 mA VCC Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 25 °C/W *Applies only to rated RF amplifier operation MSC83301 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 3.0 GHz P IN = 0.20 W V CC = 28 V 1.0 1.3 — W ηcf = 3.0 GHz P IN = 0.20 W V CC = 28 V 33 36 — % P G f= 3.0 GHz P IN = 0.20 W V CC = 28 V 7.0 8.1 — dB C OB f= 1 MHz V CB = 28 V — — 3.5 pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1m A I E = 0m A 4 5 — — V BV EBO IE = 1m A I C = 0 mA 3.5 — — V BV CER IC = 5m A R BE = 10 Ω 45 — — V ICBO VCB = 28V — — 0.5 mA hFE VCE = 5V I C = 100 mA 30 — 300 — DYNAMIC TYPICAL PERFORMANCE TYPICAL POWER OUTPUT vs FREQUENCY TYPICAL COLLECTOR EFFICIENCY vs FREQUENCY PERCENT POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE MSC83301
POUT = Saturated VCC = 28 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) MSC83301
All dimensions are in inches. Ref.: Dwg. No. C125518 RF Amplifier Power Output Test TEST CIRCUIT MSC83301
Ref.: Dwg. No. 12-0216 rev. A PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron- ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. MSC83301