MSC82100 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S011) hermetically sealed .EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER .VSWR CAPABILITY ∞ :1 @ RATED CONDITIONS .ft 1.6 GHz TYPICAL .NOISE FIGURE 15.5 dB @ 2 GHz .P OUT = 27 dBm MIN. @ 1.0 GHz
DESCRIPTION
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold me- tallization system. The device is designed speci- fically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. PIN CONNECTION BRANDING 82100 ORDER CODE MSC8210 0 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) — W IC Device Bias Current 200 mA VCE Collector-Emitter Bias Voltage* 20 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation MSC82100 1. Collector 3. Base 2. Emitter 4. Emitter THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. G P*f = 1.0 GHz P OUT = 27 dBm 10.5 11.5 — dB Δ G P *f = 1.0 GHz P OUT = 27 dBm ΔPOUT = 10 dB — — 1 dB C OB f= 1 MHz V CB = 28 V — — 3.2 pF * Note: VCE = 18V IC = 100mA STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 45 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CEO IC = 5mA I B = 0mA 20 — — V ICEO VCE = 18V — — 0.5 mA hFE VCE = 5V I C = 100mA 15 — 120 — DYNAMIC MSC82100
TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs COLLECTOR CURRENT MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC82100
VCE = 18 V IC = 100 mA Zg = 50 ohms TYPICAL S −PARAMETERS MSC82100
All dimensions are in inches. Frequency 1.0 GHz Ref.: Dwg. No. C127323 TEST CIRCUIT MSC82100
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC82100