MSC82005 STMICROELECTRONICS | Alldatasheet
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GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed .EMITTER BALLASTED .VSWR CAPABILITY ∞ :1 @ RATED CONDITIONS .REFRACTORY/GOLD METALLIZATION .HERMETIC STRIPAC PACKAGE .P OUT = 5.0 W MIN. WITH 7.0 dB GAIN @2 . 0G H z
DESCRIPTION
The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82005 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. PIN CONNECTION BRANDING 82005 ORDER CODE MSC8200 5 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* 29 W IC Device Current* 1.0 A VCC Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W *Applies only to rated RF amplifier operation MSC82005 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 2.0 GHz P IN = 1.0 W V CC = 28 V 5.0 6.0 — W ηcf = 2.0 GHz P IN = 1.0 W V CC = 28 V 35 40 — % G P f= 2.0 GHz P IN = 1.0 W V CC = 28 V 7.0 7.8 — dB C OB f= 1 MHz V CB = 28 V — — 10 pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 45 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 5mA R BE = 10Ω 45 — — V ICBO VCB = 28V — — 2.5 mA hFE VCE = 5V I C = 500mA 15 — 120 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE MSC82005
PIN = 1.0 W VCC = 28 V Normalized to 50 ohms POUT = Saturated VCC = 28 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) MSC82005
Ref.: Dwg. No. C125518 All dimensions are in inches. Frequency 2.0 GHz RF Amplifier Power Output Test TEST CIRCUIT MSC82005
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC82005