MSC82001 STMICROELECTRONICS | Alldatasheet
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GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed .EMITTER BALLASTED .REFRACTORY/GOLD METALLIZATION .VSWR CAPABILITY ∞ :1 @ RATED CONDITIONS .HERMETIC STRIPAC PACKAGE .P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @2 . 0G H z
DESCRIPTION
The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82001 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. PIN CONNECTION BRANDING 82001 ORDER CODE MSC8200 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* 7.0 W IC Device Current* 200 mA VCC Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation MSC82001 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 2.0 GHz P IN = 0.2 W V CC = 28 V 1.0 1.2 — W ηcf = 2.0 GHz P IN = 0.2 W V CC = 28 V 35 40 — % G P f= 2.0 GHz P IN = 0.2 W V CC = 28 V 7.0 7.8 — dB C OB f= 1 MHz V CB = 28 V — — 3.2 pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 45 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 5mA R BE = 10Ω 45 — — V ICBO VCB = 28V — — 0.5 mA hFE VCE = 5V I C = 100mA 15 — 120 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE MSC82001
PIN = 0.2 W VCC = 28 V Normalized to 50 ohms POUT = Saturated VCC = 28 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) MSC82001
All dimensions are in inches. Frequency 2.0 GHz Ref.: Dwg. No. C127 RF Amplifier Power Output Test TEST CIRCUIT MSC82001
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC82001