MSC81450M STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .400 x .500 2LFL (S038) hermetically sealed .REFRACTORY\\GOLD METALLIZATION .RUGGEDIZED VSWR 25:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE .POUT = 450 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions. The MSC81450M is housed in the unique BIG- PAC package with internal input/output match- ing structures. PIN CONNECTION BRANDING 81450M ORDER CODE MSC81450M ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* 910 W IC Device Current* 28 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.15 °C/W *Applies only to rated RF amplifier operation MSC81450M 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1090 MHz P IN = 90 W V CC = 50 V 450 500 — W ηcf = 1090 MHz P IN = 90 W V CC = 50 V 40 — — % G P f= 1090 MHz P IN = 90 W V CC = 50 V 7.0 — — dB Note: Pulse Width = 10µSec Duty Cycle = 1% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 15mA I E = 0mA 65 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 50mA R BE = 10Ω 65 — — V ICES VCE = 50V — — 35 mA hFE VCE = 5V I C = 1A 15 — 120 — DYNAMIC All dimensions are in inches. Ref.: Dwg. No. C125363 TEST CIRCUIT MSC81450M
Ref.: Dwg. No. 12-0212 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron- ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. MSC81450M