MSC81325M STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER BALLASTED .RUGGEDIZED VSWR ∞ :1 .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 325 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi- automatic bonding techniques ensure high relia- bility and product consistency. The MSC81325M is housed in the industry-stand- ard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures. PIN CONNECTION BRANDING 81325M ORDER CODE MSC81325M ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100˚C) 880 W IC Device Current* 24 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.17 °C/W *Applies only to rated RF amplifier operation MSC81325M 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f = 1025 — 1150 MHz P IN = 70 W V CC = 50 V 325 360 — W ηcf = 1025 — 1150 MHz P IN = 70 W V CC = 50 V 40 41 — % G P f = 1025 — 1150 MHz P IN = 70 W V CC = 50 V 6.7 7.1 — dB Note: Pulse Width = 10µSec Duty Cycle = 1% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 65 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 25mA R BE = 10Ω 65 — — V ICES VBE = 0V V CE = 50V — — 25 mA hFE VCE = 5V I C = 1A 15 — 120 — DYNAMIC All dimensions are in inches. Ref.: Dwg. No. C127471 TEST CIRCUIT MSC81325M
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC81325M