MSC81250M STMICROELECTRONICS | Alldatasheet

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RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetically sealed .REFRACTORY\\GOLD METALLIZATION .RUGGEDIZED VSWR 20:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE .P OUT = 250 W MIN. WITH 6.2 dB GAIN

DESCRIPTION

The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81250M is housed in the unique AMPAC  package with internal input/output matching structures. PIN CONNECTION BRANDING 81250M ORDER CODE MSC8125 0M ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 80°C) 600 W IC Device Current* 17.8 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation MSC81250M 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1025 — 1150 MHz P IN = 60 W V CC = 50 V 250 270 — W ηcf = 1025 — 1150 MHz P IN = 60 W V CC = 50 V 40 38 — % G P f= 1025 — 1150 MHz P IN = 60 W V CC = 50 V 6.2 6.5 — dB Note: Pulse Width = 10µSec Duty Cycle = 1% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 65 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 25mA R BE = 10Ω 65 — — V ICES VCE = 50V — — 25 mA hFE VCE = 5V I C = 1A 15 — 120 — DYNAMIC MSC81250M

PIN = 60 W VCC = 50 V Normalized to 50 ohms PIN = 60 W VCC = 50 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) L = 1025 MHz 4.2 + j 6.7 2.0 − j 7.5 M = 1090 MHz 4.0 + j 3.5 2.5 − j 7.5 H = 1150 MHz 2.3 + j 2.3 2.5 − j 8.5 MSC81250M

Ref.: Dwg. No. C127470 PACKAGE MECHANICAL DATA All dimensions are in inches. TEST CIRCUIT MSC81250M

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC81250M