MSC81118 STMICROELECTRONICS | Alldatasheet
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GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed .EMITTER BALLASTED .VSWR CAPABILITY ∞ :1 @ RATED CONDITIONS .HERMETIC STRIPAC PACKAGE .P OUT = 2.0 W MIN. WITH 10 dB GAIN @
1.0 GHz
DESCRIPTION
The MSC81118 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a re- fractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC81118 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. PIN CONNECTION BRANDING 81118 ORDER CODE MSC8111 8 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 75°C) 6.25 W IC Device Current* 200 mA VCC Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation MSC81118 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1.0 GHz P IN = 0.2 W V CC = 28 V 2.0 2.2 — W ηcf = 1.0 GHz P IN = 0.2 W V CC = 28 V 50 55 — % G P f= 1.0 GHz P IN = 0.2 W V CC = 28 V 10 10.4 — dB C OB f= 1 MHz V CB = 28 V — — 3.2 pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 45 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 5mA R BE = 10Ω 45 — — V ICBO VCB = 28V — — 0.5 mA hFE VCE = 5V I C = 100mA 15 — 120 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE MSC81118
PIN = 0.2 W VCC = 28 V Normalized to 50 ohms POUT = Saturated VCC = 28 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) MSC81118
All dimensions are in inches. Frequency 1.0 GHz Ref.:Dwg. No. C127317 TEST CIRCUIT MSC81118
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC81118