MSC81035MP STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .280 4LSL (S051) epoxy sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .∞ :1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P OUT = 35 W MIN. WITH 10.7 dB GAIN
DESCRIPTION
The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct re- placement for the MSC1035MP. MSC81035MP of- fers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and computerized auto- matic wire bonding techniques ensure high relia- bility and product consistency. The MSC81035MP is housed in the IMPAC pack- age with internal input matching. PIN CONNECTION BRANDING 81035MP ORDER CODE MSC81035MP ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 150 W IC Device Current* 3.0 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance* 1.0 °C/W *Applies only to rated RF amplifier operation Note: Thermal Resistance determ ined by Infra-Red Scann ing of Hot-Spot Junct ion Tempe rature at rated RF operating conditions. MSC81035MP 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1025 — 1150 MHz P IN = 3.0W V CC = 50V 35 40 — W ηcf = 1025 — 1150 MHz P IN = 3.0W V CC = 50V 10.7 11.2 — % G P f= 1025 — 1150 MHz P IN = 3.0W V CC = 50V 43 48 — dB Note: Pulse Width = 10µSec Duty Cycle = 1% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 65 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 10mA R BE = 10Ω 65 — — V ICES VBE = 0V V CE = 50V — — 5 mA hFE VCE = 5V I C = 500mA 15 — 120 — DYNAMIC TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER MSC81035MP
All dimensions are in inches. Ref.: Dwg. No. 101 002888 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE PIN = 3.0 W VCC = 50 V Normalized to 50 ohms ZIN L L ZCL H M M H IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) L = 1025 MHz 2.6 + j 8.3 7.7 + j 2.0 M = 1090 MHz 2.8 + j 8.7 7.1 + j 1.0 H = 1150 MHz 3.2 + j 4.4 6.5 − j 0.5 MSC81035MP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC81035MP