MSC80197 STMICROELECTRONICS | Alldatasheet
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GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S011) hermetically sealed .EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER .VSWR CAPABILITY 15:1 @ RATED CONDITIONS .ft 3.2 GHz TYPICAL .NOISE FIGURE 12.5 dB @ 2 GHz .POUT = 31.7 dBm MIN. @ 2.0 GHz
DESCRIPTION
The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. PIN CONNECTION BRANDING 80197 ORDER CODE MSC80197 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) — W IC Device Bias Current 700 mA VCE Collector-Emitter Bias Voltage* 20 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 8.5 °C/W *Applies only to rated RF amplifier operation MSC80197 1. Collector 3. Base 2. Emitter 4. Emitter THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. G P*f = 2.0 GHz P OUT = 31.7 dBm 6.0 7.0 — dB Δ G P*f = 2.0 GHz P OUT = 31.7 dBm ΔPOUT = 10 dB — — 1 dB C OB f = 1 MHz V CB = 28 V — — 7.0 pF * Note: VCE = 18 V IC = 360 mA STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 50 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CEO IC = 5mA I B = 0mA 20 — — V ICEO VCE = 18V — — 1.0 mA hFE VCE = 5V I C = 500mA 15 — 120 — DYNAMIC MSC80197
TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs COLLECTOR CURRENT MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC80197
VCE = 18 V IC = mA Zg = 50 ohms TYPICAL S −PARAMETERS MSC80197
Frequency 2.0 GHz All dimensions are in inches. Ref.: Dwg. No. C127271 TEST CIRCUIT MSC80197
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC80197