MSC80185 STMICROELECTRONICS | Alldatasheet
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GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .230 4L STUD (S027) hermetically sealed .EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER .VSWR CAPABILITY 20:1 @ RATED CONDITIONS .ft 3.2 GHz TYPICAL .NOISE FIGURE 12.0 dB @ 2 GHz .POUT = 28 dBm MIN. @ 2.0 GHz
DESCRIPTION
The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. PIN CONNECTION BRANDING 80185 ORDER CODE MSC80185 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) — W IC Device Bias Current 300 mA VCE Collector-Emitter Bias Voltage* 20 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 35 °C/W *Applies only to rated RF amplifier operation MSC80185 1. Collector 3. Base 2. Emitter 4. Emitter THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. G P*f = 2.0 GHz P OUT = 28 dBm 7.5 8.5 — dB Δ G P*f = 2.0 GHz P OUT = 28 dBm ΔPOUT = 10 dB — — 1 dB C OB f = 1 MHz V CB = 28 V — — 3.0 pF * Note: VCE = 18V IC = 140mA STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 50 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CEO IC = 5mA I B = 0mA 20 — — V ICEO VCE = 18V — — 0.5 mA hFE VCE = 5V I C = 100mA 15 — 120 — DYNAMIC MSC80185
TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs COLLECTOR CURRENT MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT MSC80185
VCE = 18 V IC = 140 mA Zg = 50 ohms TYPICAL S −PARAMETERS MSC80185
All dimensions are in inches. Ref.: Dwg. No. C127304A TEST CIRCUIT MSC80185
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A MSC80185