MSC750SMA170B MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

The following are key features of the MSC750SMA170B device:

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175 °C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant Benefits The following are benefits of the MSC750SMA170B device:
  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need for external freewheeling diode
  • Lower system cost of ownership

Applications

The MSC750SMA170B device is designed for the following applications:

  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution 1050-7773 MSC750SMA170B Datasheet Revision B

This section shows the specifications of the MSC750SMA170B device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC750SMA170B device. Table 1 • Absolute Maximum Ratings UnitRatingsCharacteristicSymbol V1700Drain source voltageVDSS A7Continuous drain current at TC = 25 °CID 5Continuous drain current at TC = 100 °C 12Pulsed drain current 1IDM V23 to –10Gate-source voltageVGS W68Total power dissipation at TC = 25 °CPD W/°C0.46Linear derating factor Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC750SMA170B device. Table 2 • Thermal and Mechanical Characteristics UnitMaxTypMinCharacteristicSymbol °C/W2.191.46Junction-to-case thermal resistanceRθJC °C175–55Operating junction temperatureTJ 150–55Storage temperatureTSTG 300Soldering temperature for 10 seconds (1.6 mm from case)TL lbf-in10Mounting torque, 6-32 or M3 screw N-m1.1 oz0.22Package weightWt g6.2 2050-7773 MSC750SMA170B Datasheet Revision B Device Specifications

The following table shows the static characteristics of the MSC750SMA170B device. TJ = 25 °C unless otherwise specified. Table 3 • Static Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol V1700VGS = 0 V, ID = 100 µADrain-source breakdown voltageV(BR)DSS mΩ940750VGS = 20 V, ID = 2.5 ADrain-source on resistance1RDS(on) V3.251.9VGS = VDS, ID = 100 µAGate-source threshold voltageVGS(th) mV/°C–5.7VGS = V DS, ID = 100 µAThreshold voltage coefficientΔVGS(th)/ ΔTJ µA100VDS = 1700 V, VGS = 0 VZero gate voltage drain currentIDSS 500VDS = 1700 V, VGS = 0 V TJ = 125 °C nA±100VGS = 20 V/–10 VGate-source leakage currentIGSS Note: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics of the MSC750SMA170B device. TJ = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol pF184VGS = 0 V, VDD = 1360 V VAC = 25 mV, ƒ = 1 MHz Input capacitanceCiss 2Reverse transfer capacitanceCrss 14Output capacitanceCoss nC11VGS = –5 V/20 V, VDD = 850 V ID = 2.5 A Total gate chargeQg 2.9Gate-source chargeQgs 2.1Gate-drain chargeQgd ns13VDD = 1200 V, VGS = –5 V/20 V ID = 5 A, RG(ext) = 8 Ω, Turn-on delay timetd(on) 12Voltage fall timetf Freewheeling diode = MSC750SMA170B (VGS = –5 V) 7Turn-off delay timetd(off) 3050-7773 MSC750SMA170B Datasheet Revision B Device Specifications

UnitMaxTypMinTest ConditionsCharacteristicSymbol 8Voltage rise timetr µJ107Turn-on switching energyEon 17Turn-off switching energyEoff ns13VDD = 1200 V, VGS = –5 V/20 V ID = 5 A, RG(ext) = 8 Ω, TJ = 150 °C Turn-on delay timetd(on) 12Voltage fall timetf Freewheeling diode = MSC750SMA170B 7Turn-off delay timetd(off) 8Voltage rise timetr µJ185Turn-on switching energyEon 20Turn-off switching energyEoff Ω2.89f = 1 MHz, 25 mV, drain shortEquivalent series resistanceESR µs2.5VDS = 1200 V, VGS = 20 VShort circuit withstand timeSCWT mJ360VDS = 150 V, VGS = 20 V, ID = 2.5 AAvalanche energy, single pulseEAS The following table shows the body diode characteristics of the MSC750SMA170B device. TJ = 25 °C unless otherwise specified. Table 5 • Body Diode Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol V3.8ISD = 2.5 A, VGS = 0 VDiode forward voltageVSD V3.9ISD = 2.5 A, VGS = –5 V ns18ISD = 5 A, VGS = –5 V, VDD = 1200 V, dl/dt = –2000 A/µs Reverse recovery timetrr nC120Reverse recovery chargeQrr Drive Rg = 8 Ω A3.0Reverse recovery currentIRRM 4050-7773 MSC750SMA170B Datasheet Revision B Device Specifications

This section shows the package specification of the MSC750SMA170B device. Package Outline Drawing The following figure illustrates the TO-247 package outline of the MSC750SMA170B device. Figure 18 • Package Outline Drawing The following table shows the TO-247 dimensions and should be used in conjunction with the package outline drawing. Table 6 • TO-247 Dimensions Max (in.)Min (in.)Max (mm)Min (mm)Symbol 0.2090.1855.314.69A 0.0980.0592.491.49B 0.1020.0872.592.21C 0.0310.0160.790.40D 0.2440.2126.205.38E 0.1500.1383.813.50F 9050-7773 MSC750SMA170B Datasheet Revision B Package Specification

Max (in.)Min (in.)Max (mm)Min (mm)Symbol 0.242 BSC6.15 BSCG 0.8450.81921.4620.80H 0.8000.78020.3219.81I 0.1770.1574.504.00J 0.0550.0401.401.01K 0.1230.1133.122.87L 0.0840.0652.131.65M 0.6400.61016.2615.49N 0.5710.53114.5013.50O 0.6890.65017.5016.50P 0.215 BSC5.45 BSCQ 0.1080.0792.752.00R 0.2950.2807.507.10S GateTerminal 1 DrainTerminal 2 SourceTerminal 3 DrainTerminal 4 10050-7773 MSC750SMA170B Datasheet Revision B Package Specification

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