MSC22N03 BWTECH | Alldatasheet

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N-Channel 30-V (D-S) MOSFET Publication Order Number: [ MSC22N03] © Bruckewell Technology Corporation Rev. A -2014 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID Continuous Drain Currenta (TA =25°C) 22 A Continuous Drain Currenta (TA =70°C) 18 A Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter Value Unit IDM Pulsed Drain Currentb 50 A IS Continuous Source Current (Diode Conduction)a 2.3 A PD Power Dissipationa (TA =25°C) 5 W Power Dissipationa (TA =70°C) 2.2 W TJ/TSTG Operating Junction and Storage Temperature -55 to +150 °C Thermal Resistance Ratings Symbol Parameter Maximum Units RθJA Maximum Junction-to-Ambient C/Wa (t <= 10 sec) 25 °C/W Maximum Junction-to-Ambient C/Wa (Steady-State) 65 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Static Symbol Parameter Test Conditions Min Typ. Max. Units VGS(th) Gate-Source Threshold Voltage VDS = VGS, ID = 250uA 1 V IGSS Gate-Body Leakage VDS = 0 V , VGS = 20 V 100 nA IDSS Zero Gate Voltage Drain Current VDS = 24 V , VGS = 0 V VDS = 24 V , VGS = 0 V , TJ= 55°C uA ID(on) On-State Drain Current VDS = 5 V, VGs = 10 V 40 A r DS(on) Drain-Source On-Resistance VGS = 10 V, ID = 2 A VGS = 4.5 V, ID = 2 A 7.5 11.5 mΩ gfs Forward Tranconductance VDS = 15 V, ID = 2 A 40 S VSD Diode Forward Voltage IS = 2 A , VGS = 0 V 0.7 V

N-Channel 30-V (D-S) MOSFET Publication Order Number: [ MSC22N03] © Bruckewell Technology Corporation Rev. A -2014 Dynamicb Symbol Parameter Test Conditions Min Typ. Max. Units Qg Total Gate Charge VDS = 15 V , ID = 10 A, VGS = 4.5 V -- 16 -- nC Qgs Gate-Source Charge -- 5 -- nC Qgd Gate-Drain Charge -- 6 -- nC td(on) Turn-On Delay Time ID = 1 A , RL = 6 Ω, VGEN = 10 V , VDD = 15 V -- 5 -- ns tr Rise Time -- 4 -- ns td(off) Turn-Off Delay Time -- 23 -- ns tf Fall Time -- 9 -- ns Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.

N-Channel 30-V (D-S) MOSFET Publication Order Number: [ MSC22N03] © Bruckewell Technology Corporation Rev. A -2014 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY , FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.